Unipolar resistive switching behavior in Dy2O3 films for nonvolatile memory applications

2012 ◽  
Vol 520 (17) ◽  
pp. 5706-5709 ◽  
Author(s):  
Jim-Long Her ◽  
Tung-Ming Pan ◽  
Chih-Hung Lu
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications ◽  
Unipolar Resistive Switching

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

2012 ◽  
Vol 51 (4R) ◽  
pp. 041102 ◽  
Author(s):  
Tae-Geun Seong ◽  
Mi-Ri Joung ◽  
Jong-Woo Sun ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications

2011 ◽  
Vol 63 (1) ◽  
pp. 100-104 ◽  
Author(s):  
M.H. Tang ◽  
Z.Q. Zeng ◽  
J.C. Li ◽  
Z.P. Wang ◽  
X.L. Xu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Zno Films ◽  
Resistive Switching Behavior ◽  
Doped Zno ◽  
Memory Applications ◽  
La Doped

scholarly journals Study of the Influence of the Dielectric Composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications

2018 ◽  
Vol 85 (8) ◽  
pp. 143-148
Author(s):  
Helena Castán ◽  
Salvador Dueñas ◽  
Kaupo Kukli ◽  
Marianna Kemell ◽  
Mikko Ritala ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications
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