Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

2015 ◽  
Vol 106 (4) ◽  
pp. 042105 ◽  
Author(s):  
D. Y. Guo ◽  
Z. P. Wu ◽  
Y. H. An ◽  
P. G. Li ◽  
P. C. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Oxide Thin Films ◽  
Resistive Switching Behavior ◽  
Memory Applications ◽  
Unipolar Resistive Switching

Bipolar resistive switching behavior of La0.5Sr0.5CoO3−σ films for nonvolatile memory applications

2014 ◽  
Vol 104 (22) ◽  
pp. 223505 ◽  
Author(s):  
Y. J. Fu ◽  
F. J. Xia ◽  
Y. L. Jia ◽  
C. J. Jia ◽  
J. Y. Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Memory Applications

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

2015 ◽  
Vol 1729 ◽  
pp. 23-28 ◽  
Author(s):  
Yogesh Sharma ◽  
Pankaj Misra ◽  
Shojan P. Pavunny ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Resistive Switching ◽  
High Resistance ◽  
Rare Earth Oxide ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Device Structure ◽  
Resistance State ◽  
Unipolar Resistive Switching

ABSTRACTRare-earth oxides have attracted considerable research interest in resistive random access memories (ReRAMs) due to their compatibility with complementary metal-oxide semiconductor (CMOS) process. To this end we report unipolar resistive switching in a novel ternary rare-earth oxide LaHoO3 (LHO) to accelerate progress and to support advances in this emerging densely scalable research architecture. Amorphous thin films of LHO were fabricated on Pt/TiO2/SiO2/Si substrate by pulsed laser deposition, followed by sputter deposition of platinum top electrode through shadow mask in order to elucidate the resistive switching behavior of the resulting Pt/LHO/Pt metal-insulator-metal (MIM) device structure. Stable unipolar resistive switching characteristics with interesting switching parameters like, high resistance ratio of about 105 between high resistance state (HRS) and low resistance state (LRS), non-overlapping switching voltages with narrow dispersion, and excellent retention and endurance features were observed in Pt/LHO/Pt device structure. The observed resistive switching in LHO was explained by the formation/rupture of conductive filaments formed out of oxygen vacancies and metallic Ho atom. From the current-voltage characteristics of Pt/LHO/Pt structure, the conduction mechanism in LRS and HRS was found to be dominated by Ohm’s law and Poole-Frenkel emission, respectively.

Unipolar Resistive Switching Behavior Study in CuxO Thin Films at Different Annealing Temperatures

2012 ◽  
Vol 586 ◽  
pp. 24-29
Author(s):  
Ying Li ◽  
Gao Yang Zhao ◽  
Fen Shi
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Surface And Interface ◽  
Behavior Study ◽  
Interface Structures ◽  
Unipolar Resistive Switching

We investigated unipolar resistance switching in CuxO thin films. We studied on the resistive switching behavior associated with the annealing temperature of CuxO thin films and focused on HRTEM, XPS and AFM analyses. In this paper we investigated the surface and interface structures of CuxO films. Results show that there is a mount of oxygen content in the CuxO thin films which is contained in Cu (Ⅱ) oxides and Cu (Ⅰ) oxides. When annealing temperature increases the qualification of oxygen vacancies increase and more oxygen vacancies is connected with top and bottom electrode.

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

2008 ◽  
Vol 92 (2) ◽  
pp. 022110 ◽  
Author(s):  
Wen-Yuan Chang ◽  
Yen-Chao Lai ◽  
Tai-Bor Wu ◽  
Sea-Fue Wang ◽  
Frederick Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Zno Thin Films ◽  
Switching Characteristics ◽  
Memory Applications ◽  
Unipolar Resistive Switching
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