The Concentration Effect of Complexing Agent on the Morphology and Optoelectronic Properties of Electrochemically Deposited n-type Cu2O Thin Films

2019 ◽  
Vol 48 (8) ◽  
pp. 4830-4839 ◽  
Author(s):  
Abdelmadjid Herbadji ◽  
Ibrahim Yaacoub Bouderbala ◽  
Loubna Mentar ◽  
Mohamed Redha Khelladi ◽  
Amor Azizi
2019 ◽  
Vol 30 (16) ◽  
pp. 15482-15492
Author(s):  
K. P. Ganesan ◽  
N. Anandhan ◽  
A. Amaliroselin ◽  
R. Thangamuthu ◽  
T. Marimuthu ◽  
...  

2021 ◽  
Vol 116 ◽  
pp. 111086
Author(s):  
S. Santhosh Kumar Jacob ◽  
I. Kulandaisamy ◽  
I. Loyola Poul Raj ◽  
Ahmed A. Abdeltawab ◽  
Sayed Z. Mohammady ◽  
...  

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
B. S. Pawar ◽  
S. M. Pawar ◽  
K. V. Gurav ◽  
S. W. Shin ◽  
J. Y. Lee ◽  
...  

The Cu2ZnSnS4 (CZTS) thin films have been electrochemically deposited from a weak acidic medium (pH 4.50~5.00) onto Mo- coated and ITO-coated glass substrate by using single-step electrodeposition method. Trisodium citrate was used as a complexing agent. The effect of annealing atmospheres such as Ar, N2, N2+H2S on the structural, morphological, compositional, and optical properties of CZTS thin films has been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and optical absorption techniques, respectively. XRD studies reveal that the as-deposited CZTS film is amorphous in nature. Upon annealing in different atmospheres, a relatively more intense and sharper diffraction peaks (112), (200), (220), and (312) of kesterite crystal structure with uniform and densely packed surface morphology are observed in N2+H2S atmosphere. Absorption study shows that the band gap energy of as-deposited CZTS thin film is 2.8 eV whereas after annealing, it is found to be 1.48, 1.76, and 1.53 eV for Ar, N2, N2+H2S atmospheres.


2010 ◽  
Vol 257 (5) ◽  
pp. 1786-1791 ◽  
Author(s):  
B.S. Pawar ◽  
S.M. Pawar ◽  
S.W. Shin ◽  
D.S. Choi ◽  
C.J. Park ◽  
...  

2019 ◽  
Vol 30 (11) ◽  
pp. 10532-10542
Author(s):  
S. Santhosh Kumar Jacob ◽  
I. Kulandaisamy ◽  
S. Valanarasu ◽  
A. M. S. Arulanantham ◽  
V. Ganesh ◽  
...  

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