Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers

2020 ◽  
Vol 49 (6) ◽  
pp. 3472-3480 ◽  
Author(s):  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Balaji Raghothamachar ◽  
Michael Dudley
2021 ◽  
Vol 54 (2) ◽  
Author(s):  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Fumihiro Fujie ◽  
Zeyu Chen ◽  
Balaji Raghothamachar ◽  
...  

Residual contrast of threading edge dislocations is observed in synchrotron back-reflection X-ray topographs of 4H-SiC epitaxial wafers recorded using basal plane reflections where both g · b = 0 and g · b × l = 0. The ray-tracing simulation method based on the orientation contrast formation mechanism is applied to simulate images of such dislocations by applying surface relaxation effects. The simulated contrast features match the observed features on X-ray topographs, clearly demonstrating that the contrast is dominated by surface relaxation. Depth profiling indicates that the surface relaxation primarily takes place within a depth of 5 µm below the surface.


2008 ◽  
Vol 1069 ◽  
Author(s):  
Yi Chen ◽  
Xianrong Huang ◽  
Ning Zhang ◽  
Govindhan Dhanaraj ◽  
Edward Sanchez ◽  
...  

ABSTRACTIn our study, closed-core threading screw dislocations and micropipes were studied using synchrotron x-ray topography of various geometries. The Burgers vector magnitude of TSDs can be quantitatively determined from their dimensions in back-reflection x-ray topography, based on ray-tracing simulation and this has been verified by the images of elementary TSDs. Dislocation senses of closed-core threading screw dislocations and micropipes can be revealed by grazing-incidence x-ray topography. The threading screw dislocations can be converted into Frank partial dislocations on the basal planes and this has been confirmed by transmission synchrotron x-ray topography.


2011 ◽  
Vol 23 (9) ◽  
pp. 2415-2417
Author(s):  
董建军 Dong Jianjun ◽  
杨正华 Yang Zhenghua ◽  
曹柱荣 Cao Zhurong ◽  
韦敏习 Wei Minxi ◽  
詹夏宇 Zhan Xiayu ◽  
...  

2014 ◽  
Vol 43 (4) ◽  
pp. 838-842 ◽  
Author(s):  
Tianyi Zhou ◽  
Balaji Raghothamachar ◽  
Fangzhen Wu ◽  
Rafael Dalmau ◽  
Baxter Moody ◽  
...  

2021 ◽  
Vol MA2021-02 (34) ◽  
pp. 1006-1006
Author(s):  
Hongyu Peng ◽  
Yafei Liu ◽  
Tuerxun Ailihumaer ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  

2001 ◽  
Vol 11 (PR2) ◽  
pp. Pr2-305-Pr2-308
Author(s):  
M. Temporal ◽  
S. Jacquemot ◽  
L. Bonnet ◽  
A. Decoster

2021 ◽  
Vol 11 (16) ◽  
pp. 7234
Author(s):  
Alexander Opolka ◽  
Dominik Müller ◽  
Christian Fella ◽  
Andreas Balles ◽  
Jürgen Mohr ◽  
...  

X-ray full-field microscopy at laboratory sources for photon energies above 10 keV suffers from either long exposure times or low resolution. The photon flux is mainly limited by the objectives used, having a limited numerical aperture NA. We show that this can be overcome by making use of the cone-beam illumination of laboratory sources by imaging the same field of view (FoV) several times under slightly different angles using an array of X-ray lenses. Using this technique, the exposure time can be reduced drastically without any loss in terms of resolution. A proof-of-principle is given using an existing laboratory metal-jet source at the 9.25 keV Ga Kα-line and compared to a ray-tracing simulation of the setup.


2020 ◽  
Vol 98 (6) ◽  
pp. 133-145
Author(s):  
Qianyu Cheng ◽  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Balaji Raghothamachar ◽  
...  

2012 ◽  
Vol 1433 ◽  
Author(s):  
Fangzhen Wu ◽  
Shayan Byrappa ◽  
Huanhuan Wang ◽  
Yi Chen ◽  
Balaji Raghothamachar ◽  
...  

ABSTRACTSynchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC. In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.


2021 ◽  
Vol 104 (7) ◽  
pp. 157-169
Author(s):  
Tuerxun Ailihumaer ◽  
Hongyu Peng ◽  
Yafei Liu ◽  
Qianyu Cheng ◽  
Zeyu Chen ◽  
...  

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