Analytical Modeling of Current and Quantum Capacitance of Single-Electron Transistor with Island Made of Armchair WSe2 Nanoribbon

2020 ◽  
Vol 49 (12) ◽  
pp. 7400-7409
Author(s):  
M. K. Bera
Keyword(s):  
Analytical Modeling ◽  
Single Electron ◽  
Quantum Capacitance ◽  
Single Electron Transistor

Analytical Modeling of Single Electron Transistor for Hybrid CMOS-SET Analog IC Design

2004 ◽  
Vol 51 (11) ◽  
pp. 1772-1782 ◽  
Author(s):  
S. Mahapatra ◽  
V. Vaish ◽  
C. Wasshuber ◽  
K. Banerjee ◽  
A.M. Ionescu
Keyword(s):  
Analytical Modeling ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Ic Design ◽  
Analog Ic ◽  
Hybrid Cmos

Analysis and modeling of quantum capacitance on graphene single electron transistor

2018 ◽  
Vol 32 (22) ◽  
pp. 1850235 ◽  
Author(s):  
Vahideh Khadem Hosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi ◽  
Razali Ismail
Keyword(s):  
Coulomb Blockade ◽  
Dominant Role ◽  
Mechanical Effect ◽  
Single Electron ◽  
Quantum Capacitance ◽  
Single Electron Transistor ◽  
Fundamental Parameters ◽  
Quantum Mechanical Effect ◽  
Operation Speed ◽  
Key Factor

Graphene single electron transistor (SET) as a coulomb blockade (CB) device operates based on the quantum mechanical effect. Its desired current is achieved by overcoming the CB energy that depends on the total capacitance of SET. Therefore, small size of graphene quantum capacitance is suitable for SET structure because it plays a dominant role in the total capacitance. In this paper, the density of state (DOS) model of graphene SET is suggested because of its important effect on many physical properties. Furthermore, carrier concentration as a key factor in quantum capacitance is modeled. Finally, the quantum capacitance of graphene SET based on the fundamental parameters is modeled and compared to the experimental data, so an acceptable agreement between them is reported. As a result, silicon SET can be replaced with graphene SET because of its lower quantum capacitance and also higher operation speed than the silicon one.

Evidence for activated conduction in a single electron transistor

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

The current analysis of a single electron transistor based on double graphene nanoscroll island

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi
Keyword(s):  
Single Electron ◽  
Single Electron Transistor ◽  
Current Analysis

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor

2021 ◽  
Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava
Keyword(s):  
Gas Sensor ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Toxic Gas

Charge transport and photon-assisted tunneling in the NSN single-electron transistor

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham
Keyword(s):  
Charge Transport ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Assisted Tunneling

scholarly journals Conductance of the single-electron transistor for arbitrary tunneling strength

2000 ◽  
Vol 62 (15) ◽  
pp. 9955-9958 ◽  
Author(s):  
Georg Göppert ◽  
Bruno Hüpper ◽  
Hermann Grabert
Keyword(s):  
Single Electron ◽  
Single Electron Transistor

Single electron transistor: Energy-level broadening effect and thermionic contribution

2017 ◽  
Vol 51 (12) ◽  
pp. 1656-1660
Author(s):  
A. Nasri ◽  
A. Boubaker ◽  
W. Khaldi ◽  
B. Hafsi ◽  
A. Kalboussi
Keyword(s):  
Energy Level ◽  
Single Electron ◽  
Single Electron Transistor
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