Single electron transistor: Energy-level broadening effect and thermionic contribution

2017 ◽  
Vol 51 (12) ◽  
pp. 1656-1660
Author(s):  
A. Nasri ◽  
A. Boubaker ◽  
W. Khaldi ◽  
B. Hafsi ◽  
A. Kalboussi
Author(s):  
A. Nasri ◽  
A. Boubaker ◽  
W. Khaldi ◽  
B. Hafsi ◽  
A. Kalboussi

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239


2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  

2021 ◽  
Vol 327 ◽  
pp. 114234
Author(s):  
Vahideh Khademhosseini ◽  
Daryoosh Dideban ◽  
Mohammad Taghi Ahmadi

Author(s):  
Kumar Gaurav ◽  
Boddepalli SanthiBhushan ◽  
Ravi Mehla ◽  
Anurag Srivastava

1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham

2000 ◽  
Vol 62 (15) ◽  
pp. 9955-9958 ◽  
Author(s):  
Georg Göppert ◽  
Bruno Hüpper ◽  
Hermann Grabert

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