Enhanced Thermomechanical Properties of ZrO2 Particle Reinforced Epoxy Nanocomposite

Author(s):  
Kaushal Kumar ◽  
P. K. Ghosh ◽  
Arun Kumar ◽  
Ompal Singh
2021 ◽  
pp. 095400832110323
Author(s):  
Jianwen Zhang ◽  
Dongwei Wang ◽  
Lujia Wang ◽  
Wanwan Zuo ◽  
Xiaohua Ma ◽  
...  

In this article, pure epoxy resin and silica–epoxy nanocomposite models were established to investigate the effects of hyperbranched polyester on microstructure and thermomechanical properties of epoxy resin through molecular dynamics simulation. Results revealed that the composite of silica can improve the thermomechanical properties of nanocomposites, including the glass transition temperature, thermal conductivity, and elastic modulus. Moreover, the thermomechanical properties were further enhanced through chemical modification on the silica surface, where the effectiveness was the best through grafting hyperbranched polyester on the silica surface. Compared with pure epoxy resin, the glass transition temperature of silica–epoxy composite modified by silica grafted with hyperbranched polyester increased by 38 K. The thermal conductivity increased with the increase of temperature and thermal conductivity at room temperature increased to 0.4171 W/(m·K)−1 with an increase ratio of 94.3%. Young’s modulus, volume modulus, and shear modulus all fluctuated as temperature rise with a down overall trend. They increased by 44.68%, 29.52%, and 36.65%, respectively, when compared with pure epoxy resin. At the same time, the thermomechanical properties were closely related to the microstructure such as fractional free volume (FFV), mean square displacement (MSD), and binding energy. Silica surface modification by grafting hyperbranched polyester reduced the FFV value and MSD value most and strengthened the combination of silica and epoxy resin matrix the best, resulting in the best thermomechanical properties.


MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.


2020 ◽  
pp. 58-66
Author(s):  
N. T. Kakhramanov ◽  
◽  
I. V. Bayramova ◽  
S. S. Pesetsky ◽  
◽  
...  

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