1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

2012 ◽  
Vol 19 (12) ◽  
pp. 3444-3448
Author(s):  
Cheng Gao ◽  
Hai-ou Li ◽  
Jiao-ying Huang ◽  
Sheng-long Diao
Sign in / Sign up

Export Citation Format

Share Document