1.0 μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition
2012 ◽
Vol 19
(12)
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pp. 3444-3448
2006 ◽
Vol 24
(6)
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pp. 2597
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1993 ◽
Vol 32
(Part 1, No. 12A)
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pp. 5508-5513
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2016 ◽
Vol 33
(10)
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pp. 108104
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