Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition
2006 ◽
Vol 24
(6)
◽
pp. 2597
◽
2012 ◽
Vol 19
(12)
◽
pp. 3444-3448
1993 ◽
Vol 32
(Part 1, No. 12A)
◽
pp. 5508-5513
◽
2016 ◽
Vol 33
(10)
◽
pp. 108104
◽