Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

2016 ◽  
Vol 108 (1) ◽  
pp. 013508 ◽  
Author(s):  
JunShuai Xue ◽  
JinCheng Zhang ◽  
Yue Hao
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