Crystal Structure, Phase Stability, Microstructure, and Optical Properties of Transition Metal Incorporated Wide Band Gap Ga2O3

JOM ◽  
2021 ◽  
Author(s):  
Vishal Zade ◽  
Roy Swadipta ◽  
C. V. Ramana
2020 ◽  
Vol 20 (3) ◽  
pp. 1422-1433 ◽  
Author(s):  
Mallesham Bandi ◽  
Vishal Zade ◽  
Swadipta Roy ◽  
Aruna N. Nair ◽  
Sierra Seacat ◽  
...  

2008 ◽  
Vol 92 (24) ◽  
pp. 241923 ◽  
Author(s):  
M. Souilah ◽  
A. Lafond ◽  
N. Barreau ◽  
C. Guillot-Deudon ◽  
J. Kessler

2017 ◽  
Vol 49 (3) ◽  
pp. 263-275 ◽  
Author(s):  
Ibrahim Alibe ◽  
Amin Matori ◽  
Elias Saion ◽  
Alibe Ali ◽  
Mohd Zaid

A simple polymer synthesis was used to successfully synthesized Zinc Oxide Nanoparticles (ZnO NPs), and the influence of the different calcination temperature on the structural, and optical properties of the material was observed using several techniques. The formation of ZnO NPs was confirmed by FT?IR, EDX, XRD, FESEM and TEM images upon calcination from 500?750?C. The FESEM images showed the ZNO NPs synthesized possessed a hexagonal shape and tended to become larger at higher calcination temperature. The XRD and FTIR revealed the precursor to be amorphous at room temperature but transform to a crystalline structure during the process of calcination. The crystalline and particle size increase as the temperature was increased. The crystalline size was between 24?49 nm for all samples calcined at 500?750?C. The optical properties obtained by UV?vis reflectance spectrometer have further confirmed the formation of ZnO NPs. The band gap exhibits typical ZnO wide band gap, and the values decrease with an increase in calcination temperature.


2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.


2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.


2014 ◽  
Vol 118 (2) ◽  
pp. 539-545 ◽  
Author(s):  
B. A. Taleatu ◽  
E. Omotoso ◽  
E. A. A. Arbab ◽  
R. A. Lasisi ◽  
W. O. Makinde ◽  
...  

2009 ◽  
Vol 517 (7) ◽  
pp. 2145-2148 ◽  
Author(s):  
M. Souilah ◽  
X. Rocquefelte ◽  
A. Lafond ◽  
C. Guillot-Deudon ◽  
J.-P. Morniroli ◽  
...  

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