Crystal structure re-investigation in wide band gap CIGSe compounds

2009 ◽  
Vol 517 (7) ◽  
pp. 2145-2148 ◽  
Author(s):  
M. Souilah ◽  
X. Rocquefelte ◽  
A. Lafond ◽  
C. Guillot-Deudon ◽  
J.-P. Morniroli ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

Effect of Titanium Induced Chemical Inhomogeneity on Crystal Structure, Electronic Structure, and Optical Properties of Wide Band Gap Ga2O3

2020 ◽  
Vol 20 (3) ◽  
pp. 1422-1433 ◽  
Author(s):  
Mallesham Bandi ◽  
Vishal Zade ◽  
Swadipta Roy ◽  
Aruna N. Nair ◽  
Sierra Seacat ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Electronic Structure ◽  
Band Gap ◽  
Wide Band ◽  
Chemical Inhomogeneity ◽  
Wide Band Gap

Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1−xGaxSe2: Impact on the optical properties

2008 ◽  
Vol 92 (24) ◽  
pp. 241923 ◽  
Author(s):  
M. Souilah ◽  
A. Lafond ◽  
N. Barreau ◽  
C. Guillot-Deudon ◽  
J. Kessler
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap

scholarly journals Synthesis, crystal structure and spectroscopy studies of a new non-centrosymmetric organic cation nitrate

2014 ◽  
Vol 10 (3) ◽  
pp. 2532-2539 ◽  
Author(s):  
H. Saadouni ◽  
D. E. Janzen ◽  
M. Rzaigui ◽  
W.Smirani Sta
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Dielectric Material ◽  
Wide Band ◽  
Spectroscopic Studies ◽  
Hydrogen Atoms ◽  
Wide Band Gap ◽  
X Ray ◽  
Protonated Amine ◽  
Spectroscopy Studies

The synthesis, crystal structure and spectroscopic studies are reported for the salt m-anisidinium nitrate. A single-crystal  X-ray investigation has shown that this compound crystallizes in the non-centrosymmetric space group Cc with the lattice parameters: a = 5.744(3) Å, b = 14.968(6) Å, c = 10.178(4) Å; b  = 96.910(7)o; V = 868.6(6)Å3 ; Z = 4. The structure was solved from 1973 independent reflections with R1 = 0.033 and wR2 = 0.088. The hydrogen atoms of the protonated amine undergo hydrogen bonding interactions with oxygen atoms of three different nitrate anions forming 2-dimensional sheets. Solution NMR results are consistent with the X-ray structure. A measured optical band gap of 3.35eV indicates m-anisidinium nitrate is a wide-band-gap dielectric material.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
Sign in / Sign up

Export Citation Format

Share Document