Crystal structure re-investigation in wide band gap CIGSe compounds

The synthesis, crystal structure and spectroscopic studies are reported for the salt m-anisidinium nitrate. A single-crystal X-ray investigation has shown that this compound crystallizes in the non-centrosymmetric space group Cc with the lattice parameters: a = 5.744(3) Å, b = 14.968(6) Å, c = 10.178(4) Å; b = 96.910(7)o; V = 868.6(6)Å3 ; Z = 4. The structure was solved from 1973 independent reflections with R1 = 0.033 and wR2 = 0.088. The hydrogen atoms of the protonated amine undergo hydrogen bonding interactions with oxygen atoms of three different nitrate anions forming 2-dimensional sheets. Solution NMR results are consistent with the X-ray structure. A measured optical band gap of 3.35eV indicates m-anisidinium nitrate is a wide-band-gap dielectric material.

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Calculated elastic constants of wide band gap semiconductor thin films with a hexagonal crystal structure for stress problems

Thin Solid Films ◽

10.1016/0040-6090(96)80022-8 ◽

1995 ◽

Vol 266 (2) ◽

pp. 189-191 ◽

Cited By ~ 41

Author(s):

R. Thokala ◽

J. Chaudhuri

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Band Gap ◽

Elastic Constants ◽

Wide Band ◽

Hexagonal Crystal Structure ◽

Hexagonal Crystal ◽

Wide Band Gap ◽

Semiconductor Thin Films

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Crystal Structure, Phase Stability, Microstructure, and Optical Properties of Transition Metal Incorporated Wide Band Gap Ga2O3

JOM ◽

10.1007/s11837-021-05015-z ◽

2021 ◽

Author(s):

Vishal Zade ◽

Roy Swadipta ◽

C. V. Ramana

Keyword(s):

Crystal Structure ◽

Optical Properties ◽

Transition Metal ◽

Band Gap ◽

Phase Stability ◽

Wide Band ◽

Wide Band Gap ◽

Structure Phase

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Influence of crystal structure on the ultrafast ionization of cubic wide-band-gap crystals by ultrashort laser pulses

Conference on Lasers and Electro-Optics ◽

10.1364/cleo_si.2018.sm3o.4 ◽

2018 ◽

Author(s):

Vitaly Gruzdev ◽

Olga Sergaeva

Keyword(s):

Crystal Structure ◽

Band Gap ◽

Wide Band ◽

Laser Pulses ◽

Ultrashort Laser Pulses ◽

Wide Band Gap ◽

Ultrashort Laser

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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