The influence of calcination temperature on structural and optical properties of ZnO nanoparticles via simple polymer synthesis route

A simple polymer synthesis was used to successfully synthesized Zinc Oxide Nanoparticles (ZnO NPs), and the influence of the different calcination temperature on the structural, and optical properties of the material was observed using several techniques. The formation of ZnO NPs was confirmed by FT?IR, EDX, XRD, FESEM and TEM images upon calcination from 500?750?C. The FESEM images showed the ZNO NPs synthesized possessed a hexagonal shape and tended to become larger at higher calcination temperature. The XRD and FTIR revealed the precursor to be amorphous at room temperature but transform to a crystalline structure during the process of calcination. The crystalline and particle size increase as the temperature was increased. The crystalline size was between 24?49 nm for all samples calcined at 500?750?C. The optical properties obtained by UV?vis reflectance spectrometer have further confirmed the formation of ZnO NPs. The band gap exhibits typical ZnO wide band gap, and the values decrease with an increase in calcination temperature.

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The Effect of the Deposition Method on the Structural and Optical Properties of ZnS Thin Films

Coatings ◽

10.3390/coatings11091064 ◽

2021 ◽

Vol 11 (9) ◽

pp. 1064

Author(s):

Iosif-Daniel Simandan ◽

Florinel Sava ◽

Angel-Theodor Buruiana ◽

Ion Burducea ◽

Nicu Becherescu ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Rutherford Backscattering Spectrometry ◽

Wide Band ◽

Deposition Method ◽

X Ray Diffraction ◽

Structural And Optical Properties ◽

Wide Band Gap ◽

X Ray

ZnS is a wide band gap material which was proposed as a possible candidate to replace CdS as a buffer layer in solar cells. However, the structural and optical properties are influenced by the deposition method. ZnS thin films were prepared using magnetron sputtering (MS), pulsed laser deposition (PLD), and a combined deposition technique that uses the same bulk target for sputtering and PLD at the same time, named MSPLD. The compositional, structural, and optical properties of the as-deposited and annealed films were inferred from Rutherford backscattering spectrometry, X-ray diffraction, X-ray reflectometry, Raman spectroscopy, and spectroscopic ellipsometry. PLD leads to the best stoichiometric transfer from target to substrate, MS makes fully amorphous films, whereas MSPLD facilitates obtaining the densest films. The study reveals that the band gap is only slightly influenced by the deposition method, or by annealing, which is encouraging for photovoltaic applications. However, sulphur vacancies contribute to lowering the bandgap and therefore should be controlled. Moreover, the results add valuable information towards the understanding of ZnS polymorphism. The combined MSPLD method offers several advantages such as an increased deposition rate and the possibility to tune the optical properties of the obtained thin films.

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Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

Dalton Transactions ◽

10.1039/c4dt00850b ◽

2014 ◽

Vol 43 (25) ◽

pp. 9620-9632 ◽

Cited By ~ 11

Author(s):

T. O. L. Sunde ◽

M. Lindgren ◽

T. O. Mason ◽

M.-A. Einarsrud ◽

T. Grande

Keyword(s):

Electrical Conductivity ◽

Optical Properties ◽

Rare Earth ◽

Rare Earth Elements ◽

Band Gap ◽

Solid Solubility ◽

Wide Band ◽

Wide Band Gap ◽

Recent Interest ◽

Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

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Microstructural and optical properties of nanocrystalline MgS thin film as wide band gap barrier material

Applied Physics A ◽

10.1007/s00339-014-8753-0 ◽

2014 ◽

Vol 118 (2) ◽

pp. 539-545 ◽

Cited By ~ 4

Author(s):

B. A. Taleatu ◽

E. Omotoso ◽

E. A. A. Arbab ◽

R. A. Lasisi ◽

W. O. Makinde ◽

...

Keyword(s):

Thin Film ◽

Optical Properties ◽

Band Gap ◽

Wide Band ◽

Wide Band Gap ◽

Barrier Material

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On the calculation of dielectric and optical properties of wide band gap semiconductors

Materials Science and Engineering B ◽

10.1016/s0921-5107(96)01941-1 ◽

1997 ◽

Vol 46 (1-3) ◽

pp. 99-100

Author(s):

Sergey K. Tikhonov ◽

Sergey Yu. Davydov ◽

A.F. Ioffe

Keyword(s):

Optical Properties ◽

Band Gap ◽

Wide Band ◽

Wide Band Gap ◽

Wide Band Gap Semiconductors ◽

Dielectric And Optical Properties

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Optical Properties of II-IV-N2 Semiconductors

MRS Proceedings ◽

10.1557/proc-831-e11.45 ◽

2004 ◽

Vol 831 ◽

Cited By ~ 8

Author(s):

John Muth ◽

Ailing Cai ◽

Andrei Osinsky ◽

Henry Everitt ◽

Ben Cook ◽

...

Keyword(s):

Optical Properties ◽

Band Gap ◽

Optical Loss ◽

Wide Band ◽

Refractive Indices ◽

Bulk Crystals ◽

Wide Band Gap ◽

Optical Effects ◽

Transmission Studies ◽

Novel Devices

ABSTRACTRecently, wide band gap II-IV-N2 semiconductors such as ZnSiN2, and ZnGeN2 and ZnSiGeN2 have been synthesized, but very little is known about their band structure, optical properties, or electronic properties. Bulk crystals are hard to synthesize because high temperatures and pressures are required. The success in growing II-IV-N2 films epitaxially by MOCVD creates interesting opportunities. The crystal structure of II-IV-N2 compounds is orthorhombic, and when grown on r-plane sapphire can provide a suitable template for GaN growth. Optical transmission studies of the band edge of ZnSiN2 and ZnSiGeN2 with varying Si and Ge percentages were conducted. The indirect nature of the band gap was investigated, and prism coupling was used to obtain the refractive indices in the visible and NIR portion of the spectrum. Although the crystal symmetry was orthorhombic, the refractive indices indicated uniaxial optical properties. Optical loss measurements indicate that the films are suitable for waveguides and novel devices based on birefringent optical effects.

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