Gate controllable spin transistor with semiconducting tunneling barrier

Nano Research ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2192-2196
Author(s):  
Shuqin Zhang ◽  
Renrong Liang ◽  
Xiawa Wang ◽  
Wenjie Chen ◽  
Weijun Cheng ◽  
...  
Keyword(s):  
Tunneling Barrier ◽  
Spin Transistor

Charge State Control of Molecules Reveals Modification of the Tunneling Barrier with Intramolecular Contrast

Nano Letters ◽  
2011 ◽  
Vol 11 (4) ◽  
pp. 1580-1584 ◽  
Author(s):  
Ingmar Swart ◽  
Tobias Sonnleitner ◽  
Jascha Repp
Keyword(s):  
Charge State ◽  
State Control ◽  
Tunneling Barrier

The role of phase‐breaking processes in indirect‐band tunneling barrier structures

1993 ◽  
Vol 74 (4) ◽  
pp. 2557-2561
Author(s):  
Richard A. Morrisey ◽  
A. N. Khondker
Keyword(s):  
Tunneling Barrier

Local Tunneling Barrier Height on Si(111) Reconstructed Surfaces

1998 ◽  
Vol 37 (Part 1, No. 6B) ◽  
pp. 3782-3784 ◽  
Author(s):  
Nobuhiro Horiguchi ◽  
Kazunori Yonei ◽  
Masahiro Miyao
Keyword(s):  
Barrier Height ◽  
Tunneling Barrier ◽  
Reconstructed Surfaces

Oscillation of giant tunneling magnetoresistance with respect to tunneling barrier thickness in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions

2007 ◽  
Vol 90 (25) ◽  
pp. 252506 ◽  
Author(s):  
Rie Matsumoto ◽  
Akio Fukushima ◽  
Taro Nagahama ◽  
Yoshishige Suzuki ◽  
Koji Ando ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Barrier Thickness ◽  
Tunneling Barrier

Theoretical Evaluation of [VIV(α-C3S5)3]2–as Nuclear-Spin-Sensitive Single-Molecule Spin Transistor

2017 ◽  
Vol 8 (13) ◽  
pp. 3056-3060 ◽  
Author(s):  
S. Cardona-Serra ◽  
A. Gaita-Ariño ◽  
M. Stamenova ◽  
S. Sanvito
Keyword(s):  
Single Molecule ◽  
Nuclear Spin ◽  
Theoretical Evaluation ◽  
Spin Transistor

scholarly journals Under-the-Tunneling-Barrier Recollisions in Strong-Field Ionization

2018 ◽  
Vol 120 (1) ◽  
Author(s):  
Michael Klaiber ◽  
Karen Z. Hatsagortsyan ◽  
Christoph H. Keitel
Keyword(s):  
Strong Field ◽  
Field Ionization ◽  
Tunneling Barrier ◽  
Strong Field Ionization

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

Sign in / Sign up

Export Citation Format

Share Document