Sub-Threshold Performance Assessment of Ultra-Thin Body InGaAs-on Insulator Negative Capacitance MOS Transistor

Silicon ◽

10.1007/s12633-019-00364-6 ◽

2020 ◽

Vol 12 (11) ◽

pp. 2681-2688

Author(s):

Subir Kumar Maity

Keyword(s):

Performance Assessment ◽

Thin Body ◽

Negative Capacitance ◽

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Performance Assessment of UTB-SOI MOS Transistor with Negative Capacitance Gate-stack

2018 International Conference on Applied Electromagnetics, Signal Processing and Communication (AESPC) ◽

10.1109/aespc44649.2018.9033231 ◽

2018 ◽

Author(s):

Elina Priyadarshini ◽

Subir Kumar Maity

Keyword(s):

Performance Assessment ◽

Negative Capacitance ◽

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Double Gate Graded Channel Negative Capacitance FET (DGGCNCFET): Performance Assessment for Low Power Digital/Analog Applications

2018 International Conference on Computing, Power and Communication Technologies (GUCON) ◽

10.1109/gucon.2018.8674968 ◽

2018 ◽

Author(s):

Hema Mehta ◽

Harsupreet Kaur

Keyword(s):

Low Power ◽

Performance Assessment ◽

Negative Capacitance ◽

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Investigation of Quantum-Induced VT Shift and Backgate-Modulated VT Properties for Ultra-Thin-Body InGaAs-OI/SOI Negative-Capacitance FETs

10.7567/ssdm.2017.e-4-02 ◽

2017 ◽

Author(s):

S.-E. Huang ◽

C.-L. Yu ◽

W.-X. You ◽

P. Su

Keyword(s):

Thin Body ◽

Negative Capacitance

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Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942460 ◽

2017 ◽

Author(s):

Ho-Pei Lee ◽

Chien-Lin Yu ◽

Wei-Xiang You ◽

Pin Su

Keyword(s):

Design Space ◽

Thin Body ◽

Negative Capacitance

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A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS2

2019 Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2019.8731270 ◽

2019 ◽

Author(s):

Sheng Luo ◽

Xiaoyi Zhang ◽

Gengchiau Liang

Keyword(s):

Performance Evaluation ◽

Thin Body ◽

Negative Capacitance ◽

Monolayer Mos2 ◽

Computational Performance

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Quantum simulation of Si, GaAs, GaSb, and Ge channel ultra-thin-body double-gate negative capacitance FETs

2014 Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2014.7348554 ◽

2014 ◽

Author(s):

J. Lee ◽

W. J. Jeong ◽

D. H. Kang ◽

M. Shin

Keyword(s):

Quantum Simulation ◽

Thin Body ◽

Negative Capacitance ◽

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New Findings on the Gate-Length Dependence of Subthreshold Swing for Ultra-Thin-Body Negative Capacitance FETs

10.7567/ssdm.2016.a-2-03 ◽

2016 ◽

Author(s):

C.P. Tsai ◽

P. Su

Keyword(s):

Subthreshold Swing ◽

Thin Body ◽

Negative Capacitance ◽

Gate Length ◽

Length Dependence ◽

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Device design considerations for ultra-thin body non-hysteretic negative capacitance FETs

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) ◽

10.1109/e3s.2013.6705876 ◽

2013 ◽

Author(s):

Chun Wing Yeung ◽

Asif I. Khan ◽

Sayeef Salahuddin ◽

Chenming Hu

Keyword(s):

Thin Body ◽

Negative Capacitance ◽

Device Design ◽

Design Considerations

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Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETs

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd02 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD02 ◽

Author(s):

Vita Pi-Ho Hu ◽

Pin-Chieh Chiu

Keyword(s):

Thin Body ◽

Negative Capacitance ◽

Switching Characteristics

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A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS2

2020 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw50361.2020.9131426 ◽

2020 ◽

Author(s):

Sheng Luo ◽

Xiaoyi Zhang ◽

Gengchiau Liang

Keyword(s):

Performance Evaluation ◽

Thin Body ◽

Negative Capacitance ◽

Monolayer Mos2 ◽

Computational Performance

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