Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique

Silicon ◽  
2020 ◽  
Author(s):  
Mitesh S Vegad ◽  
Nilesh Bhatt
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Single Crystal ◽  
Temperature Profile ◽  
Numerical Investigation ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Effect Of Temperature ◽  
Czochralski Technique ◽  
Cusp Magnetic Field

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

2002 ◽  
Vol 5 (4-5) ◽  
pp. 347-351 ◽  
Author(s):  
Erich Tomzig ◽  
Janis Virbulis ◽  
Wilfried von Ammon ◽  
Yuri Gelfgat ◽  
Leonid Gorbunov
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Combined Magnetic Fields
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