Modelling of Thermal Field and Point Defect Dynamics During Silicon Single Crystal Growth Using CZ Technique

2017 ◽  
Author(s):  
Andrejs Sabanskis ◽  
Jānis Virbulis
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Point Defect ◽  
Thermal Field ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Point Defect Dynamics

Numerical simulation of point defect transport in floating-zone silicon single crystal growth

2001 ◽  
Vol 230 (1-2) ◽  
pp. 300-304 ◽  
Author(s):  
T.L. Larsen ◽  
L. Jensen ◽  
A. Lüdge ◽  
H. Riemann ◽  
H. Lemke
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Single Crystal ◽  
Point Defect ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone

3D simulation of feed rod melting in floating zone silicon single crystal growth

2015 ◽  
Vol 51 (1) ◽  
pp. 25-36 ◽  
Author(s):  
M. Plāte ◽  
A. Krauze ◽  
J. Virbulis
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
3D Simulation ◽  
Floating Zone

Unsteady 3D and analytical analysis of segregation process in floating zone silicon single crystal growth

2009 ◽  
Vol 45 (4) ◽  
pp. 549-556 ◽  
Author(s):  
K. Lācis ◽  
◽  
A. Muižnieks ◽  
N. Jēkabsons ◽  
A. Rudevičs ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone ◽  
Analytical Analysis ◽  
Segregation Process

Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth

2002 ◽  
Vol 5 (4-5) ◽  
pp. 347-351 ◽  
Author(s):  
Erich Tomzig ◽  
Janis Virbulis ◽  
Wilfried von Ammon ◽  
Yuri Gelfgat ◽  
Leonid Gorbunov
Keyword(s):  
Crystal Growth ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Combined Magnetic Fields
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