Performance Analysis of Group IV Material Based Tunnel Field Effect Transistor: Effect of Drain Splitting and Introducing Ge-Strip at Source- Channel Junction
2016 ◽
Vol 94
◽
pp. 119-130
◽
2017 ◽
Vol 103
◽
pp. 93-101
◽
2019 ◽
Vol 130
◽
pp. 485-498
◽
2019 ◽
Vol 14
(8)
◽
pp. 1177-1182
◽