Performance Analysis of Group IV Material Based Tunnel Field Effect Transistor: Effect of Drain Splitting and Introducing Ge-Strip at Source- Channel Junction

Silicon ◽  
2020 ◽  
Author(s):  
Surender Kumar ◽  
Rajesh Mehra ◽  
Harsh Yadav ◽  
Rikmantra Basu
Sign in / Sign up

Export Citation Format

Share Document