Design Optimization of Thickness and Material of Antireflective Layer for Solar Cell Structure

Silicon ◽  
2022 ◽  
Author(s):  
L. Kholee Phimu ◽  
Rudra Sankar Dhar ◽  
Khomdram Jolson Singh
2021 ◽  
Vol 53 (1) ◽  
Author(s):  
Agageldi Muhammetgulyyev ◽  
Yeşim Yalçın ◽  
Furkan Kuruoğlu ◽  
Erman Çokduygulular ◽  
Barış Kınacı ◽  
...  

2017 ◽  
Vol 60 (5) ◽  
pp. 407-414 ◽  
Author(s):  
Mengni Xue ◽  
Hai Zhou ◽  
Yang Xu ◽  
Jun Mei ◽  
Lu Yang ◽  
...  

2012 ◽  
Vol 112 (11) ◽  
pp. 114910 ◽  
Author(s):  
Muhammad Monirul Islam ◽  
Naoya Miyashita ◽  
Nazmul Ahsan ◽  
Takeaki Sakurai ◽  
Katsuhiro Akimoto ◽  
...  

2017 ◽  
Vol 8 (6) ◽  
pp. 549-522
Author(s):  
Vytautas Makarskas ◽  
Mindaugas Jurevičius ◽  
Artūras Kilikevičius

Solar cells are one of the most popular renewable energy generation technologies, because they are reliable, low operating and maintenance costs, to conclude without any moving parts and is a boundless source of energy. In any solar cell can avoid mechanical vibrations, which may produce the solar cell glass, damage to the inner structure. In order to determine the influence of mechanical vibrations of the solar cell structure was carried out theoretical and experimental modal analysis. The study found dangerous solar cell frequencies and their deformation and optimize the method of attachment which provides a better solar cell stability. Saulės elementai – vieni populiariausių atsinaujinančių energijos gavybos technologijų, nes jie patikimi, jų mažos eksploatavimo ir priežiūros išlaidos, šie elementai sudaryti be jokių judančių dalių ir yra beribis energijos šaltinis. Bet saulės elementas neišvengia mechaninių virpesių, kurie gali įskelti saulės elemento stiklą, pažeisti vidinę konstrukciją. Siekiant nustatyti mechaninių virpesių įtaką saulės elemento konstrukcijai, buvo atliktos teorinės ir eksperimentinės modalinės analizės. Tyrime buvo rasti pavojingi saulės elemento dažniai ir jų deformacijos, rastas optimalus tvirtinimo būdas, kuris suteikia geresnį saulės elemento stabilumą.


2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.


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