scholarly journals The effect of solvents and the thickness on structural, optical and electrical properties of ITO thin films prepared by a sol–gel spin-coating process

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Mohsen Moradi-Haji Jafan ◽  
Mohammad-Reza Zamani-Meymian ◽  
Rahmatollah Rahimi ◽  
Mahboubeh Rabbani
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Coating Process ◽  
Optical And Electrical Properties ◽  
Spin Coating Process ◽  
Effect Of Solvents ◽  
Ito Thin Films

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

Effects of Annealing Condition on the Preparation of Indium-Tin Oxide (ITO) Thin Films via Sol-Gel Spin Coating Process

2005 ◽  
Vol 492-493 ◽  
pp. 325-330
Author(s):  
Hyun-Woong Han ◽  
Young Hoon Yun ◽  
Sung Churl Choi
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Process ◽  
Coating Process ◽  
Spin Coating Process ◽  
Ito Thin Films ◽  
Surface Morphologies

Indium tin oxide (ITO) thin films were deposited on glass substrates via sol-gel spin coating process from a mixed solution of Indium (Ⅲ) acetylacetonate and Tin (Ⅳ) iso-propoxide. Then, ITO thin films were fired at 500°C, and then annealed at 500°C for 30 min with the sequential annealing process; VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 gas. The effects of the different annealing processes on the surface morphologies and sheet resistance of ITO thin films were investigated. Sheet resistance values of ITO thin films treated under VacuumN2Ar/H2, N2Ar/H2 and Ar/H2 annealing process were 1.25 kohm/sq., 3.18 kohm/sq. and 4.92 kohm/sq., respectively. Actually, the sequential atmosphere gases and non-oxidizing gas, which were used in annealing process influenced the microstructural features or surface morphologies of ITO thin films: grain size and surface roughness. Thus, it was presumed that the sequential annealing condition influenced the densification behavior in the microstructural evolution of ITO thin films.

Surface Morphology and Electrical Properties of Al:ZnO Films Deposited by Spin Coating Process

2014 ◽  
Vol 925 ◽  
pp. 416-419
Author(s):  
Mohd Zainizan Sahdan ◽  
Sharul Ashikin Kamaruddin ◽  
Kah Yoong Chan ◽  
Uda Hashim ◽  
Nayan Nafarizal ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Transparent Conducting Oxide ◽  
Sol Gel ◽  
Zno Films ◽  
Coating Process ◽  
Spin Coating Process ◽  
Transparent Conducting ◽  
Structural And Electrical Properties

Aluminium (Al) doped zinc oxide (ZnO) has been considered as one of the promising transparent conducting oxide for wide applications in electronic devices. In this investigation, sol-gel spin coating process were employed to fabricate Al:ZnO on glass coated with indium tin oxide (ITO) substrate. In order to expose the effects of aluminium concentration on the structural and electrical properties of the ZnO films, different Al concentrations (1 at.%, 3 at.% and 5 at.%) were used. A field emission scanning electron microscope (FESEM) and a two point probe were employed to examined the material properties of the Al:ZnO films. Through the FESEM results, the Al:ZnO films show different morphologies behaviour with increasing the Al concentrations. Besides, the electrical conductivity was increased by increasing the dopant source and the lowest resistivity was obtained at 5 at.%. In general, the Al concentration exerts strong influence on the ZnO films properties. Keywords: Transparent conducting oxide, X-ray diffraction, sol gel

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