Characteristics of ZnO and Al Doped ZnO Thin Films Prepared by Sol Gel Method for Solar Cell Applications

Pure and Al-doped ZnO (AZO) thin films with different aluminium (Al) concentrations (Al: 0.5, 1, 2, and 3 wt.%) were prepared on p-type Si(100) substrate by a dip-coating technique using different zinc and aluminum precursors. The structural, morphological, optical and electrical properties of these films were investigated using a number of techniques, including the X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Atomic force electron microscopy (AFM), ultraviolet–visible spectrophotometry, photoluminescence(PL) spectroscopy and four-point probe technique. The X-ray diffraction (XRD) results shown that the obtained (AZO) films were polycrystalline with a highly c-axis preferred (002) orientation, and the average crystallites size decrease from 28.32 to 24.61 nm with the increase in Al dopant concentration. The studies demonstrated that the ZnO film had a good transparency in the visible range with the maximum transmittance of 95% and the band gaps (Eg) varied from 3.16 to 3.26 eV by alumium doping. Scanning electron microscopy (SEM) images showed that the surface morphology of the films changed with increase of Al-doping. The photoluminescence spectra also showed changed with Al-doping.

Effect of Aluminum Doping Ratios on the Properties of Aluminum-Doped Zinc Oxide Films Deposited by Mist Chemical Vapor Deposition Method Applying for Photocatalysis

Aluminum-doped zinc oxide film was deposited on a glass substrate by mist chemical vapor deposition method. The influence of different aluminum doping ratios on the structural and optical properties of zinc oxide film was investigated. The XRD results revealed that the diffraction peak of (101) crystal plane was the dominant peak for the deposited AZO films with the Al doping ratios increasing from 1 wt % to 3 wt %. It was found that the variation of AZO film structures was strongly dependent on the Al/Zn ratios. The intertwined nanosheet structures were obtained when Zn/O ratios were greater than Al/O ratios with the deposition temperature of 400 °C. The optical transmittance of all AZO films was greater than 80% in the visible region. The AZO film deposited with Al doping ratio of 2 wt % showed the highest photocatalytic efficiency between the wavelength of 475 nm and 700 nm, with the high first-order reaction rate of 0.004 min−1 under ultraviolet radiation. The mechanism of the AZO film influenced by aluminum doping ratio during mist chemical vapor deposition process was revealed.

Investigation on Transparent, Conductive ZnO:Al Films Deposited by Atomic Layer Deposition Process

Transparent electrodes are a core component for transparent electron devices, photoelectric devices, and advanced displays. In this work, we fabricate fully-transparent, highly-conductive Al-doped ZnO (AZO) films using an atomic layer deposition (ALD) system method of repeatedly stacking ZnO and Al2O3 layers. The influences of Al cycle ratio (0, 2, 3, and 4%) on optical property, conductivity, crystallinity, surface morphology, and material components of the AZO films are examined, and current conduction mechanisms of the AZO films are analyzed. We found that Al doping increases electron concentration and optical bandgap width, allowing the AZO films to excellently combine low resistivity with high transmittance. Besides, Al doping induces preferred-growth-orientation transition from (002) to (100), which improves surface property and enhances current conduction across the AZO films. Interestingly, the AZO films with an Al cycle ratio of 3% show preferable film properties. Transparent ZnO thin film transistors (TFTs) with AZO electrodes are fabricated, and the ZnO TFTs exhibit superior transparency and high performance. This work accelerates the practical application of the ALD process in fabricating transparent electrodes.

Superconductivity in CuIr2-x Al x Te4 telluride chalcogenides

The relationship between charge-density-wave (CDW) and superconductivity (SC), two vital physical phases in condensed matter physics, has always been the focus of scientists' research over the past decades. Motivated by this research hotspot, we systematically studied the physical properties of the layered telluride chalcogenide superconductors CuIr2-x Al x Te4 (0 ≤ x ≤ 0.2). Through the resistance and magnetization measurements, we found that the CDW order was destroyed by a small amount of Al doping. Meanwhile, the superconducting transition temperature (T c ) kept changing with the change of doping amount and rose towards the maximum value of 2.75 K when x = 0.075. The value of normalized specific heat jump (ΔC/γT c ) for the highest T c sample CuIr1.925Al0.075Te4 was 1.53, which was larger than the BCS value of 1.43 and showed that bulk superconducting nature. In order to clearly show the relationship between SC and CDW states, we propose a phase diagram of T c vs. doping content.

Structural and Electrical Characterization of Pure and Al-Doped ZnO Nanorods

Pure and Al-doped (3 at.%) ZnO nanorods were prepared by two-step synthesis. In the first step, ZnO thin films were deposited on silicon wafers by spin coating; then, ZnO nanorods (NR) and Al-doped ZnO NR were grown using a chemical bath method. The structural properties of zincite nanorods were determined by X-ray diffraction (XRD) and corroborated well with the morphologic properties obtained by field-emission gun scanning electron microscopy (FEG SEM) with energy-dispersive X-ray spectroscopy (EDS). Morphology results revealed a minute change in the nanorod geometry upon doping, which was also visible by Kelvin probe force microscopy (KPFM). KPFM also showed preliminary electrical properties. Detailed electrical characterization of pure and Al-doped ZnO NR was conducted by temperature-dependent current–voltage (I–V) measurements on Au/(Al)ZnO NR/n-Si junctions. It was shown that Al doping increases the conductivity of ZnO NR by an order of magnitude. The I–V characteristics of pure and Al-doped ZnO NR followed the ohmic regime for lower voltages, whereas, for the higher voltages, significant changes in electric conduction mechanisms were detected and ascribed to Al-doping. In conclusion, for future applications, one should consider the possible influence of the geometry change of (Al)ZnO NRs on their overall electric transport properties.

Synthesis and Characterization of Al-doped NiO Nanostructured Thin Films Elaborated by Solar Spray Pyrolysis Technique, for Photovoltaic Cells

In this experimental work, pure nickel oxide and Al-doped NiO thin films have successfully been elaborated onto glass substrates by solar spray pyrolysis technique. The substrates were heated at around 450°C using a solar heater (furnace). The structural, optical and electrical properties of the elaborated Al-doped films have been studied at different atomic percentage ratios (0, 0.5, 1, 1.5 and 2 at. %). The results of Al-doped NiO films XRD patterns were, the formation of (NiO) phase under a cubic crystalline structure (polycrystalline) with a strong favored orientation along (111) plane were noticed at all sprayed films. When Al doping ratio reaches 1 at.%, an growth in crystallite size over 31.9 nm was obtained denoting the nano-structure of the product, which confirmed by SEM images. In addition, aluminum oxide Al2O3 was clearly observed at 1.5 at.% Al ratio. Otherwise, all thin films have a good optical transmission in the visible region of about 65%, the optical band gap energy decreased from 3.69 to 3.64 eV with increasing Al doping ratio. It is shown that the layer deposited with 0.5 at.% has less disorder with few defects. The investigation on electrical properties of elaborated thin films confirmed that the conductivity of NiO films was improved, after doping them with Al which affirms their p-type character of semiconductor. However, an addition of an excessive quantity of Al content causes the formation of Al2O3 which leads to a decrease in the conductivity. It is worth mentioning that the Al content of 0.5 at.% is the optimum ratio in terms of electrical conductivity and formation defect. Al-doped NiO can be used in various optoelectronic devices due to its good transparency and high electrical conductivity.

Li2ZrO3-Coated Monocrystalline LiAl0.06Mn1.94O4 Particles as Cathode Materials for Lithium-Ion Batteries

Li2ZrO3-coated and Al-doped micro-sized monocrystalline LiMn2O4 powder is synthesized through solid-state reaction, and the electrochemical performance is investigated as cathode materials for lithium-ion batteries. It is found that Li2ZrO3-coated LiAl0.06Mn1.94O4 delivers a discharge capacity of 110.90 mAhg−1 with 94% capacity retention after 200 cycles at room temperature and a discharge capacity of 104.4 mAhg−1 with a capacity retention of 87.8% after 100 cycles at 55 °C. Moreover, Li2ZrO3-coated LiAl0.06Mn1.94O4 could retain 87.5% of its initial capacity at 5C rate. This superior cycling and rate performance can be greatly contributed to the synergistic effect of Al-doping and Li2ZrO3-coating.