Channel current analysis of GaN HEMTs with source sense pin in DC/DC boost converters

2021 ◽  
Vol 21 (4) ◽  
pp. 713-723
Author(s):  
Buket Turan Azizoglu ◽  
Abdul Balikci ◽  
Eyup Akpinar ◽  
Enes Durbaba
Keyword(s):  
Current Analysis ◽  
Boost Converters ◽  
Channel Current ◽  
Gan Hemts

P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

2017 ◽  
Vol 38 (4) ◽  
pp. 505-508 ◽  
Author(s):  
M. Fernandez ◽  
X. Perpina ◽  
J. Roig ◽  
M. Vellvehi ◽  
F. Bauwens ◽  
...  
Keyword(s):  
Short Circuit ◽  
Current Analysis ◽  
Gate Current ◽  
Gan Hemts

Channel current analysis estimates the pore-formation and the penetration of transmembrane peptides

The Analyst ◽  
2018 ◽  
Vol 143 (15) ◽  
pp. 3540-3543 ◽  
Author(s):  
Yusuke Sekiya ◽  
Shungo Sakashita ◽  
Keisuke Shimizu ◽  
Kenji Usui ◽  
Ryuji Kawano
Keyword(s):  
Pore Formation ◽  
Current Signal ◽  
Current Analysis ◽  
Transmembrane Peptides ◽  
Channel Current ◽  
Toroidal Pore ◽  
Model Peptides

We measured the current signal of the transmembrane model peptides using the barrel-stave, toroidal pore, and penetration models in order to establish a precise assignment of the channel signals.

scholarly journals Evaluation of silicon MOSFETs and GaN HEMTs in soft‐switched and hard‐switched DC‐DC boost converters for domestic PV applications

2021 ◽  
Vol 14 (5) ◽  
pp. 1032-1043
Author(s):  
Sajad A. Ansari ◽  
Jonathan N. Davidson ◽  
Martin P. Foster
Keyword(s):  
Boost Converters ◽  
Gan Hemts
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