Stimulated emission of surface plasmons in metal-insulator-metal (transition metal type like) structures

1985 ◽  
Vol 25 (5) ◽  
pp. 661-664 ◽  
Author(s):  
L.Z. Xie
Keyword(s):  
Transition Metal ◽  
Surface Plasmons ◽  
Stimulated Emission ◽  
Metal Insulator ◽  
Metal Type ◽  
Insulator Metal Transition ◽  
Metal Insulator Metal

Frequency selective heterojunction metal-insulator-metal mirror for surface plasmons

2011 ◽  
Vol 83 (23) ◽  
Author(s):  
Yongsop Hwang ◽  
Jonghwa Shin ◽  
Jae-Eun Kim ◽  
Hae Yong Park ◽  
Chul-Sik Kee
Keyword(s):  
Surface Plasmons ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Frequency Selective

Metal–insulator–metal transition in Sr2Rh1−xRuxO4(0⩽x⩽1)

2002 ◽  
Vol 81 (26) ◽  
pp. 4955-4957 ◽  
Author(s):  
T. Koida ◽  
T. Wakisaka ◽  
K. Itaka ◽  
H. Koinuma ◽  
Y. Matsumoto
Keyword(s):  
Metal Insulator ◽  
Insulator Metal Transition ◽  
Metal Insulator Metal

Electro-forming of vacancy-doped metal-SrTiO3-metal structures

2011 ◽  
Vol 1337 ◽  
Author(s):  
Florian Hanzig ◽  
Juliane Seibt ◽  
Hartmut Stoecker ◽  
Barbara Abendroth ◽  
Dirk C. Meyer
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Physical Vapor Deposition ◽  
Oxygen Vacancies ◽  
Vacuum Annealing ◽  
Metal Insulator ◽  
Metal Structures ◽  
Wide Range ◽  
Metal Insulator Metal

ABSTRACTResistance switching in metal – insulator - metal (MIM) structures with transition metal oxides as the insulator material is a promising concept for upcoming non-volatile memories. The electronic properties of transition metal oxides can be tailored in a wide range by doping and external fields. In this study SrTiO3 single crystals are subjected to high temperature vacuum annealing. The vacuum annealing introduces oxygen vacancies, which act as donor centers. MIM stacks are produced by physical vapor deposition of Au and Ti contacts on the front and rear face of the SrTiO3 crystal. The time dependent forming of the MIM stacks under an external voltage is investigated for crystals with varying bulk conductivities. For continued formation, the resistivity increases up to failure of the system where no current can be measured anymore and switching becomes impossible.

scholarly journals Metal-insulator-metal transition in NdNiO3 films capped by CoFe2O4

2017 ◽  
Vol 110 (7) ◽  
pp. 072406 ◽  
Author(s):  
M. S. Saleem ◽  
C. Song ◽  
J. J. Peng ◽  
B. Cui ◽  
F. Li ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Insulator Metal Transition ◽  
Metal Insulator Metal

Frequency selective metal-insulator-metal splitters for surface plasmons

2011 ◽  
Vol 284 (19) ◽  
pp. 4778-4781 ◽  
Author(s):  
Yongsop Hwang ◽  
Jae-Eun Kim ◽  
Hae Yong Park
Keyword(s):  
Surface Plasmons ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Frequency Selective
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