MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90031-x ◽

1986 ◽

Vol 75 (2) ◽

pp. 221-226 ◽

Author(s):

S.J. Bass ◽

M.S. Skolnick ◽

H. Chudzynska ◽

L. Smith

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

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ChemInform Abstract: FABRICATION OF LOW DARK-CURRENT PLANAR PHOTODIODES USING AN OPEN-TUBE METHOD FOR ZINC DIFFUSION INTO INDIUM PHOSPHIDE AND INDIUM GALLIUM ARSENIDE (IN0.53GA0.47AS)

Chemischer Informationsdienst ◽

10.1002/chin.198444014 ◽

1984 ◽

Vol 15 (44) ◽

Author(s):

I. CAMLIBEL ◽

A. K. CHIN ◽

H. GUGGENHEIM ◽

S. SINGH ◽

L. G. VAN UITERT ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Dark Current ◽

Open Tube ◽

Zinc Diffusion ◽

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ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)

Chemischer Informationsdienst ◽

10.1002/chin.197920013 ◽

1979 ◽

Vol 10 (20) ◽

Author(s):

S. B. PHATAK ◽

G. KELNER

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Selective Chemical ◽

Selective Chemical Etching

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ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198311006 ◽

1983 ◽

Vol 14 (11) ◽

Author(s):

K. NAKAJIMA ◽

K. AKITA

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation ◽

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Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.332107 ◽

1983 ◽

Vol 54 (2) ◽

pp. 535-539 ◽

Author(s):

P. Besomi ◽

R. B. Wilson ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Substrate Protection

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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters ◽

10.1063/1.91389 ◽

1980 ◽

Vol 36 (12) ◽

pp. 978-980 ◽

Author(s):

Ernesto H. Perea ◽

Emilio E. Mendez ◽

Clifton G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Lattice Matched

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ChemInform Abstract: CHEMICAL ETCHING OF INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE DH WAFER

Chemischer Informationsdienst ◽

10.1002/chin.198237350 ◽

1982 ◽

Vol 13 (37) ◽

Author(s):

S. ADACHI ◽

Y. NOGUCHI ◽

H. KAWAGUCHI

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

Journal of Applied Physics ◽

10.1063/1.4972481 ◽

2016 ◽

Vol 120 (24) ◽

pp. 245701 ◽

Author(s):

Yu Han ◽

Qiang Li ◽

Kei May Lau

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Quantum Well ◽

Indium Gallium Arsenide ◽

Silicon Substrates ◽

Indium Gallium ◽

Multi Quantum Well

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ChemInform Abstract: GALLIUM CONTAMINATION OF INDIUM PHOSPHIDE EPITAXIAL LAYERS IN INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE MULTILAYER STRUCTURES GROWN BY HYDRIDE TRANSPORT VAPOR PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198538001 ◽

1985 ◽

Vol 16 (38) ◽

Author(s):

S. N. G. CHU ◽

F. A. STEVIE ◽

A. T. MACRANDER ◽

R. F. KARLICEK ◽

C. C. CHANG ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multilayer Structures ◽

Epitaxial Layers ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

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Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02676808 ◽

1995 ◽

Vol 24 (11) ◽

pp. 1539-1546 ◽

Author(s):

J. W. Huang ◽

J. M. Ryan ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Oxygen Incorporation ◽

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ChemInform Abstract: PROPERTIES OF LIQUID PHASE EPITAXIAL INDIUM GALLIUM ARSENIDE (IN1-XGAXAS) (X ≅ 0.5) ON INDIUM PHOSPHIDE SUBSTRATE

Chemischer Informationsdienst ◽

10.1002/chin.197819002 ◽

1978 ◽

Vol 9 (19) ◽

Author(s):

Y. TAKEDA ◽

A. SASAKI ◽

Y. IMAMURA ◽

T. TAKAGI

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxial ◽

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