ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

Chemischer Informationsdienst ◽

10.1002/chin.198311006 ◽

1983 ◽

Vol 14 (11) ◽

Author(s):

K. NAKAJIMA ◽

K. AKITA

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation ◽

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Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.332107 ◽

1983 ◽

Vol 54 (2) ◽

pp. 535-539 ◽

Author(s):

P. Besomi ◽

R. B. Wilson ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Substrate Protection

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Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.11.023 ◽

2015 ◽

Vol 31 ◽

pp. 52-55 ◽

Author(s):

D.M. Hurtado-Castañeda ◽

J.L. Herrera-Pérez ◽

J.S. Arias-Cerón ◽

C. Reyes-Betanzo ◽

P. Rodriguez-Fragoso ◽

...

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Electrical Characterization ◽

Optical Response ◽

Gallium Arsenide Antimonide ◽

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Substrate Orientation Dependence of Growth Rate of InGaAs / InP Grown by Liquid Phase Epitaxy

Journal of The Electrochemical Society ◽

10.1149/1.2123628 ◽

1982 ◽

Vol 129 (11) ◽

pp. 2603-2609 ◽

Author(s):

Kazuo Nakajima ◽

Kenzo Akita

Keyword(s):

Growth Rate ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation

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High quality indium gallium arsenide phosphide double heterostructure material grown by the near equilibrium liquid‐phase‐epitaxy technique

Journal of Applied Physics ◽

10.1063/1.333825 ◽

1984 ◽

Vol 56 (10) ◽

pp. 2879-2882 ◽

Author(s):

P. Besomi ◽

J. Degani ◽

N. K. Dutta ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Indium Gallium Arsenide Phosphide ◽

High Quality ◽

Double Heterostructure ◽

Gallium Arsenide Phosphide ◽

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Growth rate and parameters of gallium arsenide and indium gallium arsenide films in relation to substrate orientation in the (111)-(100) range (liquid epitaxy)

Soviet Physics Journal ◽

10.1007/bf00895702 ◽

1973 ◽

Vol 16 (6) ◽

pp. 841-843 ◽

Author(s):

U. M. Kulish

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Substrate Orientation ◽

Indium Gallium ◽

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ChemInform Abstract: PROPERTIES OF LIQUID PHASE EPITAXIAL INDIUM GALLIUM ARSENIDE (IN1-XGAXAS) (X ≅ 0.5) ON INDIUM PHOSPHIDE SUBSTRATE

Chemischer Informationsdienst ◽

10.1002/chin.197819002 ◽

1978 ◽

Vol 9 (19) ◽

Author(s):

Y. TAKEDA ◽

A. SASAKI ◽

Y. IMAMURA ◽

T. TAKAGI

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxial ◽

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ChemInform Abstract: FABRICATION OF LOW DARK-CURRENT PLANAR PHOTODIODES USING AN OPEN-TUBE METHOD FOR ZINC DIFFUSION INTO INDIUM PHOSPHIDE AND INDIUM GALLIUM ARSENIDE (IN0.53GA0.47AS)

Chemischer Informationsdienst ◽

10.1002/chin.198444014 ◽

1984 ◽

Vol 15 (44) ◽

Author(s):

I. CAMLIBEL ◽

A. K. CHIN ◽

H. GUGGENHEIM ◽

S. SINGH ◽

L. G. VAN UITERT ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Dark Current ◽

Open Tube ◽

Zinc Diffusion ◽

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ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)

Chemischer Informationsdienst ◽

10.1002/chin.197920013 ◽

1979 ◽

Vol 10 (20) ◽

Author(s):

S. B. PHATAK ◽

G. KELNER

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Selective Chemical ◽

Selective Chemical Etching

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MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90031-x ◽

1986 ◽

Vol 75 (2) ◽

pp. 221-226 ◽

Author(s):

S.J. Bass ◽

M.S. Skolnick ◽

H. Chudzynska ◽

L. Smith

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

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Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters ◽

10.1063/1.91389 ◽

1980 ◽

Vol 36 (12) ◽

pp. 978-980 ◽

Author(s):

Ernesto H. Perea ◽

Emilio E. Mendez ◽

Clifton G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Indium Gallium Arsenide Phosphide ◽

Gallium Arsenide Phosphide ◽

Indium Gallium ◽

Lattice Matched

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