Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy

1988 ◽  
Vol 93 (1-4) ◽  
pp. 539-542 ◽  
Author(s):  
M.K. Lee ◽  
K.C. Huang ◽  
D.S. Wuu ◽  
H.H. Tung ◽  
K.Y. Yu
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Substrates

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 880-882 ◽  
Author(s):  
M. K. Lee ◽  
D. S. Wuu ◽  
H. H. Tung ◽  
K. Y. Yu ◽  
K. C. Huang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrates

Preparation and characterization of CuAlxGa1−xSe2alloy layers grown by low‐pressure metalorganic vapor phase epitaxy

1996 ◽  
Vol 80 (6) ◽  
pp. 3338-3345 ◽  
Author(s):  
S. Chichibu ◽  
H. Nakanishi ◽  
S. Shirakata ◽  
S. Isomura ◽  
Y. Harada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Low pressure metalorganic vapor phase epitaxy and characterization of (Al,Ga)Sb/GaSb heterostructures

1996 ◽  
Vol 167 (3-4) ◽  
pp. 415-420 ◽  
Author(s):  
M. Behet ◽  
P. Schneider ◽  
D. Moulin ◽  
K. Heime ◽  
J. Woitok ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

2017 ◽  
Vol 46 (11) ◽  
pp. 6704-6708 ◽  
Author(s):  
K. Yasuda ◽  
M. Niraula ◽  
M. Kojima ◽  
S. Kitagawa ◽  
S. Tsubota ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Substrates

Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 10A) ◽  
pp. L1109-L1111 ◽  
Author(s):  
Kazuhito Yasuda ◽  
Madan Niraula ◽  
Tomoaki Ishiguro ◽  
Yasuhiro Kawauchi ◽  
Hiroshi Morishita ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Substrates

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

2010 ◽  
Vol 312 (2) ◽  
pp. 180-184 ◽  
Author(s):  
F. Reiher ◽  
A. Dadgar ◽  
J. Bläsing ◽  
M. Wieneke ◽  
A. Krost
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Si Substrates
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