Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrate

1990 ◽  
Vol 99 (1-4) ◽  
pp. 437-440 ◽  
Author(s):  
Shizuo Fujita ◽  
Shigeo Hayashi ◽  
Mitsuru Funato ◽  
Shigeo Fujita
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Matched

Vapor‐phase epitaxial growth of InGaAs lattice matched to (100) InP for photodiode application

1979 ◽  
Vol 35 (10) ◽  
pp. 787-789 ◽  
Author(s):  
S. B. Hyder ◽  
R. R. Saxena ◽  
S. H. Chiao ◽  
R. Yeats
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Lattice Matched

X-Ray Diffraction Analysis of Heteroepitaxial Cd1-yZnyTe on GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
S. M. Johnson ◽  
W. L. Ahlgren ◽  
M. T. Smith ◽  
B. C. Johnston ◽  
S. Sen
Keyword(s):  
Plastic Deformation ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Tilt Boundary ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray

ABSTRACTX-ray diffraction techniques were used to evaluate Cd1-yZnyTe grown on GaAs substrate orientations of {100}2°, {111}, {012}, and {123}. High-quality layers having compositions at or close to the CdTe and ZnTe binary end points can be grown on GaAs, but most of the ternary compositions have extremely broad rocking curves. Layers grown on {123} and {012} were found to have large tilts toward {111} about <121> that varied systematically with the lattice mismatch; this is consistent with the mismatch being accommodated by the formation of a low-angle tilt boundary at the interface. {111} layers were found to be twinned, and thus {100}2° and {123} appear to better suited for vapor-phase epitaxial growth (VPE). High-resolution x-ray diffractometer measurements showed that the lattice mismatch is almost entirely taken up by plastic deformation, and only a small tetragonal distortion was measured. CdTe was distorted more than ZnTe, and a greater distortion was measured for layers grown on {100}2° than on {111}, in agreement with estimates made using bulk elastic constants.

Vapor phase epitaxial growth and characterization of ZnS layer on GaAs substrate for LED application

1985 ◽  
Vol 72 (1-2) ◽  
pp. 51-56 ◽  
Author(s):  
S. Iida ◽  
T. Sugimoto ◽  
S. Suzuki ◽  
S. Kishimoto ◽  
Y. Yagi
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate

The facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates

1994 ◽  
Vol 139 (3-4) ◽  
pp. 231-237 ◽  
Author(s):  
Moo-Sung Kim ◽  
Yong Kim ◽  
Min-Suk Lee ◽  
Young Ju Park ◽  
Seong-Il Kim ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Miller Index ◽  
Gaas Substrates

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Organic Vapor ◽  
Metal Organic

Epitaxial growth of ZnMgSSe on GaAs substrate by molecular beam epitaxy

1992 ◽  
Vol 117 (1-4) ◽  
pp. 139-143 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Kazushi Nakano ◽  
Takao Miyajima ◽  
Katsuhiro Akimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Gaas Substrate ◽  
Molecular Beam
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