Epitaxial growth of AlGaInP lattice-matched to GaAsP substrates by organometallic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90803-5 ◽

1993 ◽

Vol 126 (4) ◽

pp. 539-543 ◽

Author(s):

S. Minagawa ◽

Y. Ishitani ◽

T. Tanaka

Keyword(s):

Epitaxial Growth ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Lattice Matched

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Effects of V/III ratio on Si-doping in InGaAs lattice-matched to InP grown by organometallic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90245-r ◽

1993 ◽

Vol 132 (1-2) ◽

pp. 43-47 ◽

Author(s):

Ji-Beom Yoo ◽

Jeong-Soo Kim ◽

Dong-Hoon Jang ◽

Byung-Hwa Koak ◽

Dae-Kon Oh ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Si Doping ◽

Lattice Matched

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High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor

Applied Physics Letters ◽

10.1063/1.109357 ◽

1993 ◽

Vol 62 (2) ◽

pp. 160-162 ◽

Author(s):

V. S. Ban ◽

D. Rodefeld ◽

J. R. Flemish ◽

K. A. Jones

Keyword(s):

Epitaxial Growth ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

High Rate ◽

Organometallic Vapor Phase Epitaxy

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Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Corrigendum to: Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy [J. Cryst. Growth 407 (2014) 68–73]

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.02.088 ◽

2015 ◽

Vol 418 ◽

pp. 185

Author(s):

Guangxu Ju ◽

Shingo Fuchi ◽

Masao Tabuchi ◽

Hiroshi Amanoa ◽

Yoshikazu Takeda

Keyword(s):

Epitaxial Growth ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00645-6 ◽

1999 ◽

Vol 273-274 ◽

pp. 770-773 ◽

Author(s):

Y Fujiwara ◽

T Kawamoto ◽

T Koide ◽

Y Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Luminescence Properties ◽

Organometallic Vapor Phase Epitaxy

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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

Journal of Electronic Materials ◽

10.1007/bf02655263 ◽

1994 ◽

Vol 23 (2) ◽

pp. 159-166 ◽

Author(s):

H. Kanber ◽

S. X. Bar ◽

P. E. Norris ◽

C. Beckham ◽

M. Pacer

Keyword(s):

Integrated Circuits ◽

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Selective Area ◽

Monolithic Integrated Circuits ◽

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-021-08832-9 ◽

2021 ◽

Author(s):

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Yafei Liu ◽

Kim Kisslinger ◽

Xiao Tong ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l507 ◽

1991 ◽

Vol 30 (Part 2, No. 3B) ◽

pp. L507-L510 ◽

Author(s):

Shizuo Fujita ◽

Shin-ya Hirata ◽

Shigeo Fujita

Keyword(s):

Vapor Phase ◽

Alkyl Group ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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