In situ measurement method of GaAs surface coverage using secondary electron intensity

1991 ◽  
Vol 115 (1-4) ◽  
pp. 348-352 ◽  
Author(s):  
Kiyoshi Kanisawa ◽  
Jiro Osaka ◽  
Shigeru Hirono ◽  
Naohisa Inoue
2021 ◽  
pp. 1-1
Author(s):  
Xiaoyang Liang ◽  
Xinxiu Zhou ◽  
Die Hu ◽  
Wenfeng Wu ◽  
Yuchen Jia

1989 ◽  
Vol 159 ◽  
Author(s):  
J. Osaka ◽  
N. Inoue

ABSTRACTAn ultra high vacuum scanning electron microscope equipped to an MBE system is utilized to study a transient of a surface atomic structure during MBE growth of GaAs and AlGaAs by the alternate supply method. Lateral growth of a Ga-monolayer over microns is realized utilizing Ga droplets. This is confirmed by discriminating the Ga and As top layer by using the secondary electron intensity difference between the Ga and As top layer. The growth mechanism of the Ga monolayer is discussed based on the results.


2015 ◽  
Vol 21 (47) ◽  
pp. 167-170 ◽  
Author(s):  
Reiji TOMIKU ◽  
Noriko OKAMOTO ◽  
Toru OTSURU ◽  
Takaaki KAMIMIZU ◽  
Makoto YAMAGUCHI

1984 ◽  
Vol 23 (20) ◽  
pp. 3506 ◽  
Author(s):  
Yasuyuki Okamura ◽  
Sadahiko Yamamoto

2018 ◽  
Vol 45 (9) ◽  
pp. 0911011
Author(s):  
刘宁武 Liu Ningwu ◽  
王洪亮 Wang Hongliang ◽  
何天博 He Tianbo ◽  
赵月霞 Zhao Yuexia ◽  
丁忠军 Ding Zhongjun ◽  
...  

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