In-situ monitoring of carbon doped GaAs and of periodic carbon doped structures grown by chemical beam epitaxy

1995 ◽  
Vol 146 (1-4) ◽  
pp. 394-398 ◽  
Author(s):  
T.B. Joyce ◽  
T.J. Bullough ◽  
S. Westwater
Keyword(s):  
In Situ Monitoring ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped

Growth of carbon-doped GaAs, AlGaAs and InGaAs by chemical beam epitaxy and the application of in-situ monitoring

1996 ◽  
Vol 164 (1-4) ◽  
pp. 371-376 ◽  
Author(s):  
T.B. Joyce ◽  
S.P. Westwater ◽  
P.J. Goodhew ◽  
R.E. Pritchard
Keyword(s):  
In Situ Monitoring ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped

Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

scholarly journals Development of an electrochemical sensor for in-situ monitoring of reactive species produced by cold physical plasma

2021 ◽  
Vol 326 ◽  
pp. 129007
Author(s):  
Zahra Nasri ◽  
Giuliana Bruno ◽  
Sander Bekeschus ◽  
Klaus-Dieter Weltmann ◽  
Thomas von Woedtke ◽  
...  
Keyword(s):  
Electrochemical Sensor ◽  
Reactive Species ◽  
In Situ Monitoring ◽  
Physical Plasma

In Situ Monitoring of Polaron Localization and Cell Activity with Charge Accumulation Spectroscopy

2021 ◽  
pp. 2105799
Author(s):  
Yu Zhang ◽  
Li Yang ◽  
Jintao Wang ◽  
Wangying Xu ◽  
Qiming Zeng ◽  
...  
Keyword(s):  
Cell Activity ◽  
In Situ Monitoring ◽  
Charge Accumulation
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