Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

The technique and application of high resolution electron microscopy (HREM) to the study of group III–V semiconductor multilayers is described. The theory of HREM contrast is briefly reviewed, emphasizing the need to bear in mind resolution and information limits to which the images may be interpreted. The role of image simulations in this interpretation is stressed. Examples are given of the application of HREM to the study of the morphology and chemical abruptness of GaInAs–AlInAs interfaces and the defect structure at GaSb–GaAs strained interfaces.

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High-resolution electron microscopy of nanostructured materials

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137239 ◽

1995 ◽

Vol 53 ◽

pp. 172-173

Author(s):

M. José-Yacamán

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Grain Boundaries ◽

Nanostructured Materials ◽

High Resolution Electron Microscopy ◽

Hrem Image ◽

Small Particles ◽

Resolution Electron ◽

Nanophase Materials

Electron microscopy is a fundamental tool in materials characterization. In the case of nanostructured materials we are looking for features with a size in the nanometer range. Therefore often the conventional TEM techniques are not enough for characterization of nanophases. High Resolution Electron Microscopy (HREM), is a key technique in order to characterize those materials with a resolution of ~ 1.7A. High resolution studies of metallic nanostructured materials has been also reported in the literature. It is concluded that boundaries in nanophase materials are similar in structure to the regular grain boundaries. That work therefore did not confirm the early hipothesis on the field that grain boundaries in nanostructured materials have a special behavior. We will show in this paper that by a combination of HREM image processing, and image calculations, it is possible to prove that small particles and coalesced grains have a significant surface roughness, as well as large internal strain.

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HRTEM simulation of interfacial structure in amorphous multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154305 ◽

1989 ◽

Vol 47 ◽

pp. 466-467

Author(s):

Margaret L. Sattler ◽

Michael A. O'Keefe

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Cross Section ◽

High Resolution Electron Microscopy ◽

Interfacial Structure ◽

Multilayer Sample ◽

Resolution Electron ◽

Multilayered Materials ◽

Simulated Images

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.

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