3D-reconstruction of chemical state distributions in stratified samples by spatially resolved micro-X-ray resonant Raman spectroscopy

X-ray resonant Raman scattering was used, for the first time, in a confocal setup with the aim of determining different compounds of the same element in a copper-multilayer sample.

(Ta/Si) multilayer as a wide-bandpass monochromator material

Specular and non-specular X-ray reflectivity intensities of a (Ta/Si)60 multilayer sample were measured to characterize its interface structure. Since the multilayer has a good reflectance at its multilayer peaks, its performance as a wide-bandpass monochromator for X-ray scattering experiments of polymers has been tested.

Metastable Defect Studies in Hydrogen Modulated Multilayer Amorphous Silicon

ABSTRACTJunction capacitance methods were employed to investigate the metastable states in a-Si:H with hydrogen modulated Multilayer sample as well as companion homogeneous samples. Each layer in the multilayer sample was grown from the same gas mixture (SiH4+Ar or SiH4+H2) as that of homogeneous samples. We observed that in state A and metastable states produced by a short time light soaking the defect density of each layer in the multilayer sample track well the defect density of the corresponding homogeneous sample. This implies that “local” aspects of metastable defect creation dominate in the earlier light soaked states, and also the stable defects in state A are due to local properties of each layer as introduced during growth. However, for longer time light soaked states and succeeding partial annealed states the defect level of the multilayer sample is higher than either of homogeneous samples. However, the spatial variations of the stable defects are finally recovered when the sample is annealed at the same temperature as the initial state A.

HRTEM simulation of interfacial structure in amorphous multilayers

Multilayered materials have been fabricated with such high perfection that individual layers having two atoms deep are possible. Characterization of the interfaces between these multilayers is achieved by high resolution electron microscopy and Figure 1a shows the cross-section of one type of multilayer. The production of such an image with atomically smooth interfaces depends upon certain factors which are not always reliable. For example, diffusion at the interface may produce complex interlayers which are important to the properties of the multilayers but which are difficult to observe. Similarly, anomalous conditions of imaging or of fabrication may occur which produce images having similar traits as the diffusion case above, e.g., imaging on a tilted/bent multilayer sample (Figure 1b) or deposition upon an unaligned substrate (Figure 1c). It is the purpose of this study to simulate the image of the perfect multilayer interface and to compare with simulated images having these anomalies.