Density of states within the Coulomb gap

1987 ◽  
Vol 97-98 ◽  
pp. 483-486 ◽  
Author(s):  
Arnulf Möbius ◽  
Manuel Richter
1986 ◽  
Vol 56 (5) ◽  
pp. 532-535 ◽  
Author(s):  
Alice E. White ◽  
R. C. Dynes ◽  
J. P. Garno

1994 ◽  
Vol 08 (07) ◽  
pp. 913-921
Author(s):  
A.L. Efros ◽  
F.G. Pikus

A model of a classical electron liquid without external disorder is applied to two-dimensional electrons in a strong magnetic field. Computer modeling gives a quantitative explanation for the recently observed gap in the tunneling current of a double quantum well structure. We find that both the Coulomb gap in the single-well density of states and the correlation of electron motion in the two wells are responsible for the tunneling gap. We show that the classical liquid model provides an accurate description of the low temperature compressibility obtained from magnetocapacitance experiment.


1989 ◽  
Vol 03 (11) ◽  
pp. 815-819
Author(s):  
E.A. DE ANDRADA E SILVA ◽  
I.C. DA CUNHA LIMA

In this letter we use a Semi-Classical Impurity Band Model and obtain by Monte Carlo simulation the density of states (DOS) and the impurity charge distribution inside a quantum well (QW) of Ga 1−x Al x As/GaAs . We show the existence of a Coulomb gap as has been observed in bulk semiconductors. The DOS is not very sensitive to the QW width close to the Coulomb gap, at least in the range from 1 to 4 times the Bohr radius, and shows a behavior D(E)∝|E−EF| which indicates a two-dimensional signature. We show that the neutral donors concentrate in the center of the well according to a distribution whose width and decay rate depend on the compensation and impurity concentration respectively. Those effects are expected to be observed by infra-red absorption experiments and useful in device diagnosis.


1985 ◽  
Vol 52 (3) ◽  
pp. 511-520 ◽  
Author(s):  
J. H. Davies

1997 ◽  
Vol 56 (21) ◽  
pp. 13943-13953
Author(s):  
D. A. Parshin ◽  
A. Equibian ◽  
G. Bellessa

1993 ◽  
Vol 07 (05) ◽  
pp. 265-269
Author(s):  
PEIHUA DAI ◽  
YOUZHU ZHANG ◽  
M. P. SARACHIK

We briefly review the temperature dependence of hopping conduction in doped semiconductors near the metal-insulator transition, with emphasis on recent experimental results in Si:B at very low temperatures. Our main finding is that at sufficiently low temperature the conduction is simply activated in zero magnetic field, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form expected for a "soft" Coulomb gap. This suggests that the density of states is determined by electron correlations due to exchange as well as charge.


Sign in / Sign up

Export Citation Format

Share Document