Physical properties of amorphous silicon, prepared by HF silane decomposition at high substrate temperature

1987 ◽  
Vol 97-98 ◽  
pp. 1391-1394 ◽  
Author(s):  
O.I. Konkov ◽  
E.I. Terukov ◽  
V.Kh. Kydoyarova ◽  
A.A. Babayev
Keyword(s):  
Substrate Temperature ◽  
Physical Properties ◽  
Amorphous Silicon ◽  
High Substrate Temperature ◽  
High Substrate

Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

1993 ◽  
Vol 73 (11) ◽  
pp. 7435-7440 ◽  
Author(s):  
Ratnabali Banerjee ◽  
Sukriti Ghosh ◽  
S. Chattopadhyay ◽  
A. K. Bandyopadhyay ◽  
P. Chaudhuri ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Silicon Films ◽  
High Substrate ◽  
Hydrogenated Amorphous

A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature

1996 ◽  
Vol 420 ◽  
Author(s):  
O. A. Golikova ◽  
A. N. Kuznetsov ◽  
V. Kh. Kudojarova ◽  
M. M. Kazanin ◽  
A. Ikosarev
Keyword(s):  
Substrate Temperature ◽  
Hydrogen Content ◽  
High Substrate Temperature ◽  
Decomposition Technique ◽  
High Substrate ◽  
Optimized Conditions

AbstractDc-magnetron assisted silane decomposition technique has been tested for deposition of undoped a-Si:H at substrate temperature Ts=300–400°C. In the optimized conditions device-quality a-Si: H films were deposited independently of Ts. A low hydrogen content CH (up to 2 at.°) and microstructure variations are characteristic of the MASD films.

Characteristics of a-Si solar cells prepared by the super chamber at a high substrate temperature

1994 ◽  
Vol 2 (3) ◽  
pp. 211-219 ◽  
Author(s):  
Masato Nishikuni ◽  
Tsuyoshi Takahama ◽  
Shingo Okamoto ◽  
Kunimoto Ninomiya ◽  
Hidenori Nishiwaki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
High Substrate Temperature ◽  
High Substrate ◽  
Si Solar Cells

Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
W. Futako ◽  
I. Shimizu ◽  
C. M. Fortmann
Keyword(s):  
Thin Layer ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Atomic Hydrogen ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Narrow Gap ◽  
High Quality ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

Successful fabrication of high Ku columnar CoPt-SiO2 granular film sputtered under high substrate temperature

2014 ◽  
Vol 115 (17) ◽  
pp. 17B752 ◽  
Author(s):  
Kim Kong Tham ◽  
Shintaro Hinata ◽  
Shin Saito ◽  
Migaku Takahashi
Keyword(s):  
Substrate Temperature ◽  
High Substrate Temperature ◽  
Granular Film ◽  
High Substrate
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