Kinetics of metastable states in hydrogenated amorphous silicon

1989 ◽  
Vol 114 ◽  
pp. 591-596
Author(s):  
Warren Jackson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Metastable States ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Kinetics of metastability in doped hydrogenated amorphous silicon

1994 ◽  
Vol 69 (2) ◽  
pp. 291-306 ◽  
Author(s):  
C. E. Nebel ◽  
R. A. Street ◽  
W. B. Jackson ◽  
N. M. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

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