Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.