The effect of electron-phonon interaction and a strong magnetic field on the ground state binding energy of a hydrogenic impurity in GaAs-GaAlAs quantum well structures

1986 ◽  
Vol 47 (7) ◽  
pp. 689-691 ◽  
Author(s):  
A. Erçelebi ◽  
R. Turan
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Quantum Well ◽  
Strong Magnetic Field ◽  
Ground State ◽  
Phonon Interaction ◽  
Hydrogenic Impurity ◽  
Quantum Well Structures ◽  
Electron Phonon Interaction ◽  
Ground State Binding Energy

Electron–phonon effect on the ground-state binding energy of hydrogenic impurity in quantum-well wire in presence of an electric field

2007 ◽  
Vol 390 (1-2) ◽  
pp. 256-262 ◽  
Author(s):  
Arshak L. Vartanian ◽  
Mkrtich A. Yeranosyan ◽  
Albert A. Kirakosyan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Ground State ◽  
Hydrogenic Impurity ◽  
Ground State Binding Energy ◽  
Quantum Well Wire

Effects of temperature and magnetic field on the ground state binding energy of the strong coupling magneto-polaron in an RbCl asymmetrical semi-exponential quantum well

2019 ◽  
Vol 33 (21) ◽  
pp. 1950239 ◽  
Author(s):  
Xiu-Qing Wang ◽  
Ying-Jie Chen ◽  
Jing-Lin Xiao
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Quantum Well ◽  
Strong Coupling ◽  
Ground State ◽  
Unitary Transformation ◽  
Great Influence ◽  
Ground State Binding Energy ◽  
The Mean ◽  
Effects Of Temperature

The ground state binding energy (E[Formula: see text]) and the mean number of LO phonons (N) of the strong-coupling magneto-polaron (SCMP) in an asymmetrical semi-exponential quantum well (ASEQW) are studied theoretically. Temperature (T) effects on E[Formula: see text] and N are acquired with the quantum statistics theory (QST). By using the Lee-Low-Pines unitary transformation (LLPUT) and linear combination operation method (LCOM), the variations of E[Formula: see text] and N with T and [Formula: see text] of magnetic field are discussed. The investigated results indicate that both T and [Formula: see text] have great influence on E[Formula: see text] and N of LO phonons.

BINDING ENERGY OF A BOUND POLARON IN THE FINITE PARABOLIC QUANTUM WELL

2001 ◽  
Vol 15 (20) ◽  
pp. 827-835 ◽  
Author(s):  
FENG-QI ZHAO ◽  
XI XIA LIANG
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Ground State Energy ◽  
Ground State ◽  
State Energy ◽  
Transition Energy ◽  
Energy Levels ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Bound Polaron

We have studied the effect of the electron–phonon interaction on the energy levels of the bound polaron and calculated the ground-state energy, the binding energy of the ground state, and the 1 s → 2 p ± transition energy in the GaAs/Al x Ga 1-x As parabolic quantum well (PQW) structure by using a modified Lee–Low–Pines (LLP) variational method. The numerical results are given and discussed. It is found that the contribution of electron–phonon interaction to the ground-state energy and the binding energy is obvious, especially in large well-width PQWs. The electron–phonon interaction should not be neglected.

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

The effect of hydrostatic pressure on binding energy and polaron effect of bound polaron in wurtzite AlyGa1−yN/AlxGa1−xN parabolic quantum well

2020 ◽  
pp. 2150008
Author(s):  
Feng Qi Zhao ◽  
Zi Zheng Guo ◽  
Bo Zhao
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Optical Phonon ◽  
Ground State ◽  
Phonon Interaction ◽  
Polaron Effect ◽  
Bound Polaron ◽  
Composition Formula ◽  
Effect Of Hydrostatic Pressure

The effect of hydrostatic pressure on binding energy and polaron effect of the bound polaron in a wurtzite Al[Formula: see text]Ga[Formula: see text]N/Al[Formula: see text]Ga[Formula: see text]N parabolic quantum well (QW) is studied using the Lee–Low–Pines intermediate coupling variational method in the paper. The numerical relationship of binding energy and polaron effect of the bound polaron are given as a functions of pressure [Formula: see text], composition [Formula: see text] and well width [Formula: see text]. In the theoretical calculations, the anisotropy of the electron effective band mass, the optical phonon frequency, the dielectric constant and other parameters in the system varying with the pressure [Formula: see text] and the coordinate [Formula: see text] are included. The electron–optical phonon interaction and the impurity center–optical phonon interaction are considered. The results show that hydrostatic pressure has a very obvious effect on binding energy and polaron effect of the bound polaron in the wurtzite Al[Formula: see text]Ga[Formula: see text]N/Al[Formula: see text]Ga[Formula: see text]N parabolic QW. For QWs with determined structural parameters, the contributions of the three branch of phonons, i.e., the confined (CF) phonon, half-space (HS) phonon and the interface (IF) phonon, to binding energy of the polaron increase with the increase of the pressure [Formula: see text], the CF phonons contribute the most. Under the condition of a certain well width and hydrostatic pressure, with the increase of the composition [Formula: see text], the ground state binding energy of the bound polaron in the wurtzite Al[Formula: see text]Ga[Formula: see text]N/Al[Formula: see text]Ga[Formula: see text]N parabolic QW increases, and the contribution of the IF phonon and HS phonons to the binding energy decreases, while the contribution of the CF phonons and the total contribution of all phonons increase significantly. In the wurtzite Al[Formula: see text]Ga[Formula: see text]N/Al[Formula: see text]Ga[Formula: see text]N parabolic QW, the ground state binding energy of the bound polaron decreases with the increase of the well width. The decrease rate is greater in the narrow well, and smaller in the wide well. The contribution of different branches of phonons to binding energy varies with the change of the well width. With the increase of the well width, the contribution of CF phonons to binding energy increases, the contribution of HS phonons to binding energy decreases, and the IF phonon contribution and the total phonon contribution first increase to the maximum value and then gradually decrease slightly. The changing trend of binding energy of bound polaron in the wurtzite Al[Formula: see text]Ga[Formula: see text]N/Al[Formula: see text]Ga[Formula: see text]N parabolic QW, of the contribution of different branch phonons to binding energy with the pressure [Formula: see text], composition [Formula: see text] and well width [Formula: see text] is similar to that of the GaN/Al[Formula: see text]Ga[Formula: see text]N square QW, but the change in the parabolic QW is more obvious.

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