Electron–phonon effect on the ground-state binding energy of hydrogenic impurity in quantum-well wire in presence of an electric field

2007 ◽  
Vol 390 (1-2) ◽  
pp. 256-262 ◽  
Author(s):  
Arshak L. Vartanian ◽  
Mkrtich A. Yeranosyan ◽  
Albert A. Kirakosyan

2019 ◽  
Vol 33 (21) ◽  
pp. 1950239 ◽  
Author(s):  
Xiu-Qing Wang ◽  
Ying-Jie Chen ◽  
Jing-Lin Xiao

The ground state binding energy (E[Formula: see text]) and the mean number of LO phonons (N) of the strong-coupling magneto-polaron (SCMP) in an asymmetrical semi-exponential quantum well (ASEQW) are studied theoretically. Temperature (T) effects on E[Formula: see text] and N are acquired with the quantum statistics theory (QST). By using the Lee-Low-Pines unitary transformation (LLPUT) and linear combination operation method (LCOM), the variations of E[Formula: see text] and N with T and [Formula: see text] of magnetic field are discussed. The investigated results indicate that both T and [Formula: see text] have great influence on E[Formula: see text] and N of LO phonons.



2000 ◽  
Vol 220 (1) ◽  
pp. 171-174 ◽  
Author(s):  
I.D. Mikhailov ◽  
F.J. Betancur ◽  
J.H. Marín


1995 ◽  
Vol 205 (3-4) ◽  
pp. 273-278 ◽  
Author(s):  
Huy Thien Cao ◽  
D.B. Tran Thoai


2007 ◽  
Vol 21 (05) ◽  
pp. 279-286 ◽  
Author(s):  
FENG-QI ZHAO ◽  
JIAN GONG

The ground state and binding energies of the hydrogenic impurity in a finite GaN/Al x Ga 1-x N parabolic quantum well (PQW) are investigated by using variational method. The effect of an electric field and spatial dependence effective mass (SDEM) are considered in the calculation. The results indicate that the effect of the SDEM on the energy levels is more obvious in the case of the narrower well width L. The effects decrease with increasing L, and tend to zero. The electric field shifts the energy levels towards lower energies with increasing well width L. Furthermore the ground state binding energy of the hydrogenic impurity in GaN/Al x Ga 1-x N PQWs is larger than that in GaAs/Al x Ga 1-x As PQWs. Therefore, we affirm that there is stronger quantum confinement effect in GaN/Al x Ga 1-x N PQW.





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