Optical and electrical properties of disordered layers in GaAs crystals produced by Si+-ion implantation

1981 ◽  
Vol 182-183 ◽  
pp. 719-726 ◽  
Author(s):  
S. Shigetomi ◽  
T. Matsumori
2007 ◽  
Vol 390 (1-2) ◽  
pp. 71-78 ◽  
Author(s):  
S. Venkatachalam ◽  
Yoshinori Kanno ◽  
D. Mangalaraj ◽  
Sa.K. Narayandass

1985 ◽  
Vol 45 ◽  
Author(s):  
K. C. Cadien ◽  
B. B. Harbison

ABSTRACTRecoil ion implantation of In2O3 into soda glass substrates has been investigated. Increased adhesion results, while the optical and electrical properties are altered. Large energy deposition rates can lead to the reduction of the oxide, thus decreasing visible transmission. Thermal annealing in air results in the recovery of optical and electrical properties. The influence of ion energy and dose on the modification of the glass has been examined.


2006 ◽  
Vol 21 (12) ◽  
pp. 1661-1667 ◽  
Author(s):  
S Venkatachalam ◽  
D Mangalaraj ◽  
Sa K Narayandass ◽  
R Kesavamoorthy ◽  
P Magudapathy ◽  
...  

1986 ◽  
Vol 60 (10) ◽  
pp. 3641-3650 ◽  
Author(s):  
D. R. Myers ◽  
R. M. Biefeld ◽  
P. L. Gourley ◽  
J. J. Wiczer ◽  
T. E. Zipperian ◽  
...  

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