The electrical conductivity of a thin metal film in a longitudinal magnetic field

Physica ◽  
1968 ◽  
Vol 40 (1) ◽  
pp. 91-109 ◽  
Author(s):  
N.C. McGill
2021 ◽  
Vol 2056 (1) ◽  
pp. 012018
Author(s):  
I A Kuznetsova ◽  
O V Savenko ◽  
D N Romanov

Abstract The electrical conductivity of a thin metal film in an alternating electric field is calculated considering the quantum size effect. The Fermi surface of the metal has the shape of an ellipsoid of rotation, the main axis of which is parallel to the plane of the film. The quantum kinetic equation obtained from the von Neumann equation (the Liouville quantum equation) is solved. The Soffer model is used as the boundary conditions for the distribution function. The dependence of the electrical conductivity on the film thickness is analyzed. A comparison is made with experimental data on the electrical conductivity of bismuth thin films.


2012 ◽  
Vol 116 (22) ◽  
pp. 12149-12155 ◽  
Author(s):  
Shirly Borukhin ◽  
Cecile Saguy ◽  
Maria Koifman ◽  
Boaz Pokroy

1972 ◽  
Vol 50 (18) ◽  
pp. 2122-2137
Author(s):  
R. Turner ◽  
J. F. Cochran

According to Van Gelder the microwave absorption by a thin metal film in the presence of a static magnetic field normal to the film contains a series of peaks as the magnetic field is varied. In the present paper it is argued that these peaks correspond to Doppler-shifted cyclotron resonances of the carriers in the metal due to the quantization of electron momenta normal to the plane of the film. A simple quantum calculation is presented for the case of free electrons where the film is thin enough that to first order the microwave fields within are determined only by the boundary conditions and Maxwell's equations. The quantum expression is in good agreement with the absorption calculated using semiclassical arguments which can be readily extended to more complicated Fermi surfaces.


1999 ◽  
Author(s):  
Seok Chung ◽  
Jun Keun Chang ◽  
Dong Chul Han

Abstract To make some MF.MS devices such as sensors and actuators be useful in the medical application, it is required to integrate this devices with power or sensor lines and to keep the hole devices biocompatible. Integrating micro machined sensors and actuators with conventional copper lines is incompatible because the thin copper lines are not easy to handle in the mass production. To achieve the compatibility of wiring method between MEMS devices, we developed the thin metal film deposition process that coats micropattered thin copper films on the non silicon-wafer substrate. The process was developed with the custom-made three-dimensional thin film sputter/evaporation system. The system consists of process chamber, two branch chambers, substrate holder unit and linear/rotary motion feedthrough. Thin metal film was deposited on the biocompatible polymer, polyurethane (PellethaneR) and silicone, catheter that is 2 mm in diameter and 1,000 mm in length. We deposited Cr/Cu and Ti/Cu layer and made a comparative study of the deposition processes, sputtering and evaporation. The temperature of both the processes were maintained below 100°C, for the catheter not melting during the processes. To use the films as signal lines connect the signal source to the actuator on the catheter tip, we machined the films into desired patterns with the eximer laser. In this paper, we developed the thin metal film deposition system and processes for the biopolymeric substrate used in the medical MEMS devices.


2013 ◽  
Vol 536 ◽  
pp. 142-146 ◽  
Author(s):  
C. Camerlingo ◽  
M.P. Lisitskiy ◽  
L. De Stefano ◽  
I. Rea ◽  
I. Delfino ◽  
...  

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