Temperature independence of the angle-resolved X-ray photoemission spectra of gold and platinum valence bands

ABSTRACTOptical and photoelectron spectroscopies using VUV and Soft X-ray photons are powerful tools for studies of elemental and compound actinides. Large changes in the relative atomic cross sections of the 5f, 6d and sp electrons allow decomposition of the character of the valence bands using photoemission. Resonant enhancement of photoelectrons and Auger electrons at the 5d core threshold further aids the decomposition and gives a measure of elemental specificity. Angle-resolved photoemission can be used to map the momentum dependence of the electronic states. The large changes in relative cross section with photon energy yields further details when the mapping is done at equivalent points in multiple zones. Spectra for well understood rare earth materials will be presented to establish spectral characteristics for known atomic character initial states. These signatures will be applied to the case of USb to investigate f-d hybridization near the Fermi level.

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X-ray photoemission spectrum of the III–VI layer compound GaTe in the region of the valence bands

Physica B+C ◽

10.1016/0378-4363(81)90215-1 ◽

1981 ◽

Vol 105 (1-3) ◽

pp. 59-64 ◽

Cited By ~ 7

Author(s):

F. Antonangeli ◽

A. Balzarotti ◽

E. Doni ◽

R. Girlanda ◽

V. Grasso ◽

...

Keyword(s):

Photoemission Spectrum ◽

Layer Compound ◽

X Ray ◽

Valence Bands

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Electronic states of core levels and valence bands for KxC60 studied by X-ray photoelectron spectroscopy

Physica C Superconductivity ◽

10.1016/0921-4534(91)90117-h ◽

1991 ◽

Vol 181 (4-6) ◽

pp. 320-324 ◽

Cited By ~ 8

Author(s):

Y. Fukuda ◽

N. Sanada ◽

M. Nagoshi ◽

T. Takahashi ◽

H. Katayama-Yoshida ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Electronic States ◽

X Ray ◽

Valence Bands

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Photoreflectance Characterization of InGaAs Lattice Matched to InP

MRS Proceedings ◽

10.1557/proc-324-225 ◽

1993 ◽

Vol 324 ◽

Author(s):

V. Bellani ◽

M. Amiotti ◽

M. Geddo ◽

G. Guizzetti ◽

G. Landgren

Keyword(s):

Energy Gap ◽

Lattice Mismatch ◽

Blue Shift ◽

X Ray Diffraction ◽

X Ray ◽

Different Temperatures ◽

Interfacial Strain ◽

Valence Bands ◽

Lattice Matched

AbstractWe measured photoreflectance (PR) spectra at different temperatures between 80 and 300 K, and optical absorption (OA) at 3 K on MOVPE grown Inl-xGaxAs nearly lattice-matched to InP. x-ray diffraction measurements gave a lattice mismatch δa/ao = -0.9.10−3 between ternary alloy and InP, corresponding to × = 0.485. We obtained the energy gap dependence on T from PR spectra. The blue shift of the gap was accounted for in terms of compositional difference with respect to the perfectly lattice matched alloy (× = 0.472), and elastic strain; moreover PR and OA showed evidence of the valence bands splitting at k = 0 due to interfacial strain, in fine agreement with theory.

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