On the local quasiparticle density of states within the asymmetric Anderson model

1981 ◽  
Vol 39 (10) ◽  
pp. 1105-1108 ◽  
Author(s):  
M. Salomaa
Keyword(s):  
Density Of States ◽  
Anderson Model ◽  
Quasiparticle Density

scholarly journals Constraints on the quasiparticle density of states in high- T c superconductors

2000 ◽  
Vol 52 (2) ◽  
pp. 203-209 ◽  
Author(s):  
T Cren ◽  
D Roditchev ◽  
W Sacks ◽  
J Klein
Keyword(s):  
Density Of States ◽  
Quasiparticle Density

Density of states for the two-dimensional, simple-square Anderson model

1981 ◽  
Vol 24 (10) ◽  
pp. 6156-6157 ◽  
Author(s):  
Wei-Min Hu ◽  
Shang-Yuan Ren ◽  
John D. Dow
Keyword(s):  
Density Of States ◽  
Anderson Model ◽  
Two Dimensional

Vortex Lattice and Quasiparticle Density of States in CeRu2Studied by Scanning Tunneling Spectroscopy

2000 ◽  
Vol 69 (7) ◽  
pp. 1970-1973 ◽  
Author(s):  
Hideaki Sakata ◽  
Nobuhiko Nishida ◽  
Masato Hedo ◽  
Kenji Sakurai ◽  
Yoshihiko Inada ◽  
...  
Keyword(s):  
Density Of States ◽  
Vortex Lattice ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Quasiparticle Density

scholarly journals Dependence of the Density of States on the Probability Distribution for Discrete Random Schrödinger Operators

2018 ◽  
Vol 2020 (17) ◽  
pp. 5279-5341 ◽  
Author(s):  
Peter D Hislop ◽  
Christoph A Marx
Keyword(s):  
Probability Measure ◽  
Density Of States ◽  
Anderson Model ◽  
Schrödinger Operators ◽  
Bethe Lattice ◽  
Single Site ◽  
Random Schrödinger Operators ◽  
Integrated Density Of States ◽  
Schrodinger Operators ◽  
Wide Range

Abstract We prove that the density of states measure (DOSm) for random Schrödinger operators on $\mathbb{Z}^d$ is weak-$^{\ast }$ Hölder-continuous in the probability measure. The framework we develop is general enough to extend to a wide range of discrete, random operators, including the Anderson model on the Bethe lattice, as well as random Schrödinger operators on the strip. An immediate application of our main result provides quantitive continuity estimates for the disorder dependence of the DOSm and the integrated density of states (IDS) in the weak disorder regime. These results hold for a general compactly supported single-site probability measure, without any further assumptions. The few previously available results for the disorder dependence of the IDS valid for dimensions $d \geqslant 2$ assumed absolute continuity of the single-site measure and thus excluded the Bernoulli–Anderson model. As a further application of our main result, we establish quantitative continuity results for the Lyapunov exponent of random Schrödinger operators for $d=1$ in the probability measure with respect to the weak-$^{\ast }$ topology.

Changes in Density of States Caused by Chemisorption: Monolayer of Adatoms on a Model Transition Metal

1978 ◽  
Vol 33 (1) ◽  
pp. 66-73
Author(s):  
Kin-ichi Masuda
Keyword(s):  
Electronic Structure ◽  
Phase Shift ◽  
Transition Metal ◽  
Density Of States ◽  
Anderson Model ◽  
Surface Density ◽  
Direct Interaction ◽  
Coverage Dependence ◽  
Model Transition ◽  
Shift Technique

The effect of chemisorption of a monolayer of atoms on the (001) surface of a model transition metal is investigated using the Green's function formalism and the phase shift technique. The electronic structure of the surface is obtained by the application of the Kalkstein and Soven method. For comparison, both a single and two peaked model of the surface density of states (DOS) are used. The change in the DOS upon chemisorption as well as the adatom DOS are calculated within the Newns-Anderson model for chemisorption. It is shown that the two peaked substrate DOS model can qualitatively account for the strong coverage dependence of the photoemission spectra observed in the H/W(100) system. In addition, it is shown that the direct interaction between the adatoms plays an important role in the monolayer chemisorption.

Epitaxial Single-Layer Graphene on the SiC Substrate

2012 ◽  
Vol 717-720 ◽  
pp. 645-648 ◽  
Author(s):  
Sergey Yu. Davydov ◽  
Alexander A. Lebedev
Keyword(s):  
Silicon Carbide ◽  
Density Of States ◽  
Anderson Model ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Electron Charge ◽  
Analytical Expression ◽  
Layer Graphene

The analytical expression for the density-of-states (DOS) of single-layer graphene interacting with the SiC surface (epitaxial graphene) is obtained. The silicon carbide DOS is described within the scope of the Haldane-Anderson model. It is shown that due to the interaction with the substrate the gap of about 0.01-0.06 eV arises in the epitaxial graphene DOS. The estimation indicates that the electron charge of about (−10-3) e/atom transfers from the substrate to graphene.

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