Theory of magneto-exciton binding energy in realistic quantum well structures

1988 ◽  
Vol 68 (1) ◽  
pp. 1-5 ◽  
Author(s):  
D.M. Whittaker ◽  
R.J. Elliott.
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Exciton Binding Energy ◽  
Quantum Well Structures

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Gail ◽  
J. Brunner ◽  
U. Menczigar ◽  
A. Zrenner ◽  
G. Abstreiter
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Elevated Temperatures ◽  
Variational Calculation ◽  
Exciton Binding Energy ◽  
Quantum Well Structures ◽  
Mass Approximation ◽  
Wide Range ◽  
Good Agreement

AbstractWe report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

Observations and calculations of the exciton binding energy in (In,Ga)As/GaAs strained-quantum-well heterostructures

1990 ◽  
Vol 41 (2) ◽  
pp. 1090-1094 ◽  
Author(s):  
Karen J. Moore ◽  
Geoffrey Duggan ◽  
Karl Woodbridge ◽  
Christine Roberts
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Exciton Binding Energy ◽  
Strained Quantum Well

CHALLENGES IN APPLICATION OF A MONTE CARLO METHOD TO STUDY AN EXCITON CONFINED IN AlGaAs/GaAs SINGLE QUANTUM WELL

2012 ◽  
Vol 26 (23) ◽  
pp. 1250129
Author(s):  
M. SOLAIMANI ◽  
M. IZADIFARD ◽  
H. ARABSHAHI ◽  
R. SARKARDEI
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Binding Energy ◽  
Quantum Well ◽  
Monte Carlo Sampling ◽  
Exciton Binding Energy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Cpu Time ◽  
Computational Aspects

In this work, we have studied some computational aspects of a Monte Carlo method applied to an exciton which is confined in an AlGaAs/GaAs single quantum well. The computational pseudo-code and effect of its computational parameters like number of the Monte Carlo sampling points on a physical quantity like exciton binding energy are investigated. Then the CPU time under the change of such computational parameters are calculated. Finally, the exciton binding energy and errors of different methods of approximating the effective two dimensional coulomb potential for these systems are compared.

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