Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements

2011 ◽  
Vol 50 (6S) ◽  
pp. 06GH09 ◽  
Author(s):  
Koshiro Kashima ◽  
Atsuhiko Fukuyama ◽  
Kentaro Sakai ◽  
Hirosumi Yokoyama ◽  
Masahiko Kondow ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Exciton Binding Energy ◽  
Photothermal Spectroscopy ◽  
Quantum Well Structures

Optical determination of the heavy‐hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well

1995 ◽  
Vol 78 (10) ◽  
pp. 6327-6329 ◽  
Author(s):  
Hosun Lee ◽  
E. D. Jones ◽  
S. R. Kurtz ◽  
T. Schmiedel ◽  
D. C. Houghton ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Exciton Binding Energy ◽  
Hole Effective Mass ◽  
Optical Determination

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Gail ◽  
J. Brunner ◽  
U. Menczigar ◽  
A. Zrenner ◽  
G. Abstreiter
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Elevated Temperatures ◽  
Variational Calculation ◽  
Exciton Binding Energy ◽  
Quantum Well Structures ◽  
Mass Approximation ◽  
Wide Range ◽  
Good Agreement

AbstractWe report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

Observations and calculations of the exciton binding energy in (In,Ga)As/GaAs strained-quantum-well heterostructures

1990 ◽  
Vol 41 (2) ◽  
pp. 1090-1094 ◽  
Author(s):  
Karen J. Moore ◽  
Geoffrey Duggan ◽  
Karl Woodbridge ◽  
Christine Roberts
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Exciton Binding Energy ◽  
Strained Quantum Well

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

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