Bulk and surface collective excitations of electron hole plasma in semiconductor superlattices with zero valence band offset

1989 ◽  
Vol 69 (4) ◽  
pp. 397-401 ◽  
Author(s):  
G. Eliasson ◽  
P. Hawrylak ◽  
X. Zhu ◽  
X. Xia ◽  
J.J. Quinn
1992 ◽  
Vol 281 ◽  
Author(s):  
Shang Yuan Ren ◽  
John D. Dow

ABSTRACTA theory of electronic structures of NGaN×NAlGaN GaN/Alx Ga1−xN wurtzite semiconductor superlattices (grown in the direction of the c-axis) is developed and used to predict the superlattices' band structures, energy gaps, and the “deep” energy levels of substitutional s- and p-bonded defects in them. In addition, the valence band offset of GaN with respect to AlN, the one adjustable parameter of the theory, is determined to be about 0.4 times the total fundamental band-gap difference, by fitting the optical data for the superlattices' fundamental band gaps as a function of the layer thicknesses NGaN and NAlN, with the valence band edge of AlN being at lower energy.


1992 ◽  
Vol 263 (1-3) ◽  
pp. 457-461 ◽  
Author(s):  
L.V. Butov ◽  
V.D. Kulakovskii ◽  
T.G. Andersson ◽  
A. Forchel ◽  
D. Grützmacher

1973 ◽  
Vol 15 (2) ◽  
pp. 711-720 ◽  
Author(s):  
V. N. Dobrovolskii ◽  
M. N. Vinoslavskii ◽  
O. S. Zinets

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1014-1016
Author(s):  
M. Combescot ◽  
J. Bok

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