Plasmon sidebands in optical gain spectra of high density electron-hole plasma in CdS

1981 ◽  
Vol 39 (1) ◽  
pp. 71-74 ◽  
Author(s):  
H. Saito
1988 ◽  
Vol 37 (4) ◽  
pp. 583-586 ◽  
Author(s):  
R Cingolani ◽  
M Ferrara ◽  
M Lugarà

Author(s):  
J.-Chr. Holst ◽  
L. Eckey ◽  
A. Hoffmann ◽  
I. Broser ◽  
H. Amano ◽  
...  

High-excitation processes like biexciton decay and recombination of an electron-hole-plasma are discussed as efficient mechanisms for lasing in blue laser diodes [1]. Therefore, the investigation of these processes is of fundamental importance to the understanding of the properties of GaN as a basic material for optoelectronical applications. We report on comprehensive photoluminescence and gain measurements of highly excited GaN epilayers grown by metal-organic chemical vapor deposition (MOCVD) over a wide range of excitation densities and temperatures. For low temperatures the decay of biexcitons and the electron-hole-plasma dominate the spontaneous-emission and gain spectra. A spectral analysis of the lineshape of these emissions is performed and the properties of the biexciton and the electron-hole-plasma in GaN will be disscused in comparison to other wide-gap materials. At increased temperatures up to 300 K exciton-exciton-scattering and band-to-band recombination are the most efficient processes in the gain spectra beside the electron-hole-plasma.


2006 ◽  
Vol 119-120 ◽  
pp. 346-349 ◽  
Author(s):  
Nobuyuki Arai ◽  
Jun Takeda ◽  
Hang-Ju Ko ◽  
Takafumi Yao

1982 ◽  
Vol 42 (12) ◽  
pp. 883-887 ◽  
Author(s):  
J. Collet ◽  
A. Cornet ◽  
M. Pugnet ◽  
T. Amand

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