Temperature dependence of optical absorption induced by exciton resonances in GaAs/GaAlAs multi-quantum-well structures

1990 ◽  
Vol 74 (6) ◽  
pp. 533-538 ◽  
Author(s):  
J. Filipowicz ◽  
C. Ghezzi ◽  
L. Tarricone
Keyword(s):  
Optical Absorption ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga0.6Al0.4As Multi Quantum Well Structures

1985 ◽  
Vol 24 (Part 1, No. 3) ◽  
pp. 369-370 ◽  
Author(s):  
Tadaki Miyoshi ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Decay Time ◽  
Quantum Well Structures ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well
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