Semiconductor Materials Analysis and Fabrication Process Control
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Infrared analysis of buried insulator layers formed by ion implantation into silicon

1993 ◽  
pp. 312-315
Author(s):  
J. Samitier ◽  
S. Martinez ◽  
A. El Hassani ◽  
A. Pěrez-Rodríguez ◽  
J.R. Morante
Keyword(s):  
Ion Implantation ◽  
Infrared Analysis ◽  
Insulator Layers

Epioptic analysis of the initial ordered growth of Au on Si(111)

1993 ◽  
pp. 266-268
Author(s):  
J.D. O'Mahony ◽  
J.F. McGilp ◽  
M.H.W. Verbruggen ◽  
C.F.J. Flipse

Non-destructive identification of end-of-range damage in ion-implanted and annealed silicon

1993 ◽  
pp. 227-231
Author(s):  
Yu. Shreter ◽  
J.H. Evans ◽  
B. Hamilton ◽  
A.R. Peaker ◽  
C. Hill ◽  
...  
Keyword(s):  
Non Destructive ◽  
Ion Implanted

Round robin investigation of silicon oxide on silicon reference materials for ellipsometry

1993 ◽  
pp. 45-51
Author(s):  
J. Vanhellemont ◽  
H.E. Maes ◽  
M. Schaekers ◽  
A. Armigliato ◽  
H. Cerva ◽  
...  
Keyword(s):  
Reference Materials ◽  
Silicon Oxide ◽  
Round Robin
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