The effect of atomic orbital non-orthogonality on the production of surface states in tight-binding solids

1975 ◽  
Vol 47 (2) ◽  
pp. 729-733 ◽  
Author(s):  
K.G. Petzinger
2018 ◽  
Vol 25 (05) ◽  
pp. 1850101 ◽  
Author(s):  
A. BELAYADI ◽  
B. BOURAHLA ◽  
F. MEKIDECHE-CHAFA

We present theoretical models to study the localized electronic surface states in metallic structures. The materials under study have been chosen with different types of cubic meshes, fcc, sc and bcc. The calculation method used is closely related to the Linear Combination of Atomic Orbitals (LCAO) in the tight-binding method. We consider three cases: each of the atoms is described by a single atomic orbital of [Formula: see text]-, [Formula: see text]- and [Formula: see text]-type orbitals. In order to solve the rectangular secular equations of the systems under study, the phase field matching method is involved. In particular, we apply our approach to calculate the localized electronic surface states of some metals: (i) Chromium and Silver having, respectively, bcc and fcc structure and described as [Formula: see text]-type orbital. (ii) Nickel with sc crystallization and described by [Formula: see text]-type orbital. (iii) Palladium (Pd) given in fcc crystallization and described by [Formula: see text]-type orbital. The obtained results illustrate spatial edge effects between the bulk modes and the localized electronic states of the metallic surfaces over the three orientations of high symmetry path. We observe many localized states above and below the bulk band range. In addition, the relaxation effect on the surface layer has been investigated to compute the localized electronic surface state in this case and illustrate the lift of the degeneracy compared to the first calculations based on an ordered surface. The spacing geometry caused by the relaxation on the surface has been determined by using the Molecular dynamic algorithm and Morse interatomic potential.


1981 ◽  
Vol 23 (8) ◽  
pp. 4063-4075 ◽  
Author(s):  
J. B. Krieger ◽  
Pinchus M. Laufer

2015 ◽  
Vol 29 (06) ◽  
pp. 1550034 ◽  
Author(s):  
Xiaoyong Guo ◽  
Zaijun Wang ◽  
Qiang Zheng ◽  
Jie Peng

We investigate the topological phases of a three-dimensional (3D) topological insulator (TI) without the top–bottom inversion symmetry. We calculate the momentum depended spin Chern number to extract the phase diagram. Various phases are found and we address the dependence of phase boundaries on the strength of inversion asymmetry. Opposite to the quasi-two-dimensional thin film TI, in our 3D system the TI state is stabilized by the structure inversion asymmetry (SIA). With a strong SIA the 3D TI phase can exist even under a large Zeeman field. In a tight-binding form, the surface modes are discussed to confirm with the phase diagram. Particularly we find that the SIA cannot destroy the surface states but open a gap on its spectrum.


2017 ◽  
Vol 26 (03) ◽  
pp. 1740018
Author(s):  
Parijat Sengupta

Topological insulators are a new class of materials characterized by fully spin-polarized surface states, a linear dispersion, imperviousness to external non-magnetic perturbations, and a helical character arising out of the perpendicular spin-momentum locking. This article answers in a pedagogical way the distinction between a topological and normal insulator, the role of topology in band theory of solids, and the origin of these surface states. Numerical techniques including diagonalization of the TI Hamiltonians are described to quantitatively evaluate the behaviour of topological insulator states. The Hamiltonians based on continuum and tight binding approaches are contrasted. The application of TIs as components of a fast switching environment or channel material for transistors is examined through I-V curves. The potential pitfall of such devices is presented along with techniques that could potentially circumvent the problem. Additionally, it is demonstrated that a strong internal electric field can also induce topological insulator behaviour with wurtzite nitride quantum wells as representative materials.


1992 ◽  
Vol 264 (1-2) ◽  
pp. 23-32 ◽  
Author(s):  
K. Cierocki ◽  
D. Troost ◽  
L. Koenders ◽  
W. Mönch

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