Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells

The dynamics of the photoluminescence negative circular polarization of the InP/(In,Ga)P quantum dots ensemble was studied. We find that in the time-resolved dependences of the polarization there are no oscillations in Voigt magnetic field. Also, with increasing field the polarization declines to zero. Such behavior is attributed to the peculiarities of the negatively charged exciton spin dynamics, particularly, to the fact that in the negatively charged exciton ground state the spin dynamics is governed by the heavy hole. We show that magnetic field depolarization of the photoluminescence occurs once the field of dynamically polarized nuclear spins acting on electron spins is surpassed.

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Surface-induced broadening and shift of exciton ground-state resonance in quantum wells

physica status solidi (c) ◽

10.1002/pssc.200303826 ◽

2003 ◽

Vol 0 (8) ◽

pp. 2921-2925

Author(s):

N. Atenco-Analco ◽

N. M. Makarov ◽

F. Pérez-Rodríguez

Keyword(s):

Quantum Wells ◽

Ground State ◽

Exciton Ground State ◽

State Resonance

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Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

Journal of Nanomaterials ◽

10.1155/2019/5349291 ◽

2019 ◽

Vol 2019 ◽

pp. 1-7

Author(s):

Takuya Kawazu

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Valence Band ◽

Energy Barrier ◽

Heavy Hole ◽

Electronic States ◽

Light Hole ◽

Photoluminescence Excitation ◽

Band Mixing ◽

Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

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Exchange splitting of light hole excitons in Al1−χGaχAs-GaAs quantum wells

Solid State Communications ◽

10.1016/0038-1098(91)90149-p ◽

1991 ◽

Vol 80 (8) ◽

pp. 553-556 ◽

Cited By ~ 21

Author(s):

Martin W. Berz ◽

Lucio Claudio Andreani ◽

Edgar F. Steigmeier ◽

Franz-Karl Reinhart

Keyword(s):

Quantum Wells ◽

Light Hole ◽

Exchange Splitting

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Feasibility Of Novel Si-Based Interminiband Lasers

MRS Proceedings ◽

10.1557/proc-533-227 ◽

1998 ◽

Vol 533 ◽

Author(s):

Gregory Sun ◽

Lionel Friedman ◽

Richard A. Soref

Keyword(s):

Quantum Wells ◽

Current Density ◽

Population Inversion ◽

Heavy Hole ◽

Optical Gain ◽

Laser Structure ◽

Strained Si ◽

Superlattice Structures ◽

A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

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